Research on a film-flapping triboelectric nanogenerator for wind energy harvesting

Yang, En; Wang, Yan; Wang, JianYe; Wang, Chuan; Liu, Changxin; Wu, Mengxue; Mi, Jianchun; Xu, Minyi

doi:10.1360/sst-2020-0391

Cited by 3 publications

(1 citation statement)

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“…The quantity σ is the surface charge den sity of the PTFE and the conductive ink film, whereas S is the actual contact area between the PTFE and the conductive ink film. The relationship between the voltage (V), the amount of charge (Q), and the distance between the two triboelectric charges (x) of the F TENG can be deduced using the electrodynamic theory [24]:…”

Section: The Working Principle Of a Single F-tengmentioning

confidence: 99%

An Array of Flag-Type Triboelectric Nanogenerators for Harvesting Wind Energy

et al. 2022

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Harvesting wind energy from the ambient environment is a feasible method for powering wireless sensors and wireless transmission equipment. Triboelectric nanogenerators (TENGs) have proven to be a stable and promising technology for harvesting ambient wind energy. This study explores a new method for the performance enhancement and practical application of TENGs. An array of flag-type triboelectric nanogenerators (F-TENGs) for harvesting wind energy is proposed. An F-TENG consists of one piece of polytetrafluoroethylene (PTFE) membrane, which has two carbon-coated polyethylene terephthalate (PET) membranes on either side with their edges sealed. The PTFE was pre-ground to increase the initial charge on the surface and to enhance the effective contact area by improving the surface roughness, thus achieving a significant improvement in the output performance. The vertical and horizontal arrays of F-TENGs significantly improved the power output performance. The optimal power output performance was achieved when the vertical parallel distance was approximately 4D/15 (see the main text for the meaning of D), and the horizontal parallel distance was approximately 2D. We found that the peak output voltage and current of a single flag-type TENG of constant size were increased by 255% and 344%, respectively, reaching values of 64 V and 8 μA, respectively.

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Section: The Working Principle Of a Single F-tengmentioning

confidence: 99%