Research of SiO2/InP structure prepared by photo-CVD

Haung, C. J.; Su, Yan Kuin

doi:10.1007/bf02655245

JEM

1990

DOI: 10.1007/bf02655245

|View full text |Cite

Research of SiO2/InP structure prepared by photo-CVD

C. J. Haung

Yan Kuin Su

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1991

2002

Publication Types

Select...

Article6

Relationship

Self Cite1

Independent5

Authors

Journals

Cited by 13 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Various methods of low temperature SiO2 deposition have been studied recently, including pyrolytic decomposition (4,5), plasma-enhanced chemical vapor deposition (PECVD) (6), remote plasma-enhanced chemical vapor deposition (RPECVD) (7), and photo-enhanced chemical vapor deposition (Photo-CVD) (8,9). These techniques involve the excitation of gas species by heat, electrical discharge, or ultraviolet light, resulting in complex reactions both in the gas phase and on the surface.…”

mentioning

confidence: 99%

Structural and Electrical Properties of Low‐Temperature, Low‐Pressure SiO2 on Si

Dauplaise

Vaccaro

Bennett

et al. 1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

The physical and electrical properties of SiO2 deposited on Si at low pressure (2-10 Torr) and low temperature (100-300~ are reported. Fourier transform infrared spectroscopy (FTIR) is used to examine the chemical nature of the deposited oxide as a function of deposition and anneal temperature. Films deposited at T<200~ reveal partially oxidized silicon along with water and silanol groups. As the deposition temperature is raised to 3O0~ the FTIR spectra resemble that of thermal oxide. Annealing of films deposited at lower temperatures significantly improves the films, also causing the FTIR peaks to resemble those of thermal oxide. Capacitance-voltage measurements are used to extract fixed-charge and interface-state densities. Fixed-charge densities below 1 • 1011 cm -2 and interface-state densities below 5 • 10 TM cm -2 eV -1 are obtained after rapid thermal annealing of SiO2 on Si. Bias-temperature stressing is used to investigate slow trapping instabilities observed after rapid thermal annealing.

show abstract

mentioning

confidence: 99%

Structural and Electrical Properties of Low‐Temperature, Low‐Pressure SiO2 on Si

Dauplaise

Vaccaro

Bennett

et al. 1992

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Charge Transport in MOS-Structures with Low-Temperature Silicon Dioxide Films

Belousov

Ефимов

Sinitsa

et al. 1991

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition

Huang

2002

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

INTRODUCTIONElectrically insulating films with a low density of interfacial-electronic states are important for the development of metal-oxide semiconductor (MOS) technologies using indium phosphide (InP), a material showing good promise for high-speed devices and microwave and monolithic optoelectronic circuits. High-electron mobility and high-saturation velocity are the two key properties that make InP attractive for these applications. Metal-insulator semiconductor (MIS) interfaces formed on InP enjoy a surface-state density less than that of other III-V semiconductors studied to date. Early efforts focused on the development of InP MIS technology using anodic and thermal 1,2 oxides as gate insulators. However, the use of such oxides was abandoned because of their low resistivity and large amount of interface state. Thus, the best InP MIS results have been achieved with deposited dielectric layers. 3,4 Silicon dioxide (SiO 2 ) has been the most widely used gate dielectric in InP metal-insulator semiconductor field-effect transistors (MISFETs) because of its high quality and ease of deposition at moderate temperatures. Recently, chemical-vapor deposition (CVD) of SiO 2 onto InP 5-9 has been reported to provide usable MOS characteristics, while SiO 2 on GaAs has yielded only marginal results. 10-13 The attainment of good quality insulating films by traditional technologies usually requires elevated temperatures, but the volatile InP surface 14 requires that the substrate temperature remain as low as possible. Liquid-phase deposition (LPD) provides an alternative method of SiO 2 deposition. The LPDSiO 2 deposition is superior to alternative methods in terms of the following characteristics: 15 low-processing temperature, simple equipment, high-growth rate, selective deposition, low cost, and high film quality. In our previous studies, 12,16 the LPD-SiO 2 films were successfully deposited on Hg 1-x Cd x Te and GaAs. In this paper, we extend our prior work by using LPD to deposit SiO 2 films on InP. Thus, a detailed investigation of the technique, growth mechanism, and film qualities for LPD deposition of SiO 2 on InP is presented. EXPERIMENTAL PROCEDUREApparatus and basic LPD equilibrium equations are found in our previous study. [11][12][13]17 The starting solution is a commercial 34 wt.% hydrofluosilicic (H 2 SiF 6 ) solution from which a 3.09 M H 2 SiF 6 saturated-growth solution is prepared. Excess silicicacid powder (SiO 2 ϫ H 2 O), instead of a previous study's SiO 2 powder, 18 is added to the starting solution and thoroughly mixed by stirring for 6 h at room temperature. To ensure solution saturation, H 2 O 2 is added to the solution, and the color of the soSilicon-dioxide (SiO 2 ) growth on an indium-phosphide (InP) substrate by use of room-temperature (ϳ30°C) liquid-phase deposition (LPD) is demonstrated. The produced LPD-SiO 2 is of good quality and reliability because of the suppression of interdiffusion by use of relatively low temperatures. Because LPD is difficult without residual OH on the substrate...

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Research of SiO2/InP structure prepared by photo-CVD

Cited by 13 publications

References 17 publications

Structural and Electrical Properties of Low‐Temperature, Low‐Pressure SiO2 on Si

Structural and Electrical Properties of Low‐Temperature, Low‐Pressure SiO2 on Si

Charge Transport in MOS-Structures with Low-Temperature Silicon Dioxide Films

Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition

Contact Info

Product

Resources

About