Research of mechanical stresses in irradiated tin-doped silicon crystals

Matyash, I. E.; Minailova, I. A.; Сердега, Б. К.

doi:10.1016/j.mssp.2017.08.002

Cited by 2 publications

(2 citation statements)

References 23 publications

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“…Being electrically neutral and larger than Si, it is used for stress compensation in layers of heavily doped elements such as B and P, which are smaller than Si [72][73][74]. Sn dopant can serve to monitor mechanical stresses in Si, originating from the presence of structural defects, impurities and growth defects [75,76]. Furthermore, it has been determined that Sn improves [77] the minority carrier lifetime in Fe-contaminated Si, influences [78] the recombination characteristics of γ-irradiated Si, and accelerates [79] the degradation conductivity of electron irradiated Si.…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

et al. 2022

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Crystalline silicon (Si) is the key material of the semiconductor industry, with significant applications for electronic and microelectronic devices. The properties of Si are affected by impurities and defects introduced into the material either during growth and/or material processing. Oxygen (O) and carbon (C) are the main impurities incorporated into the crystal lattice during growth via the Czochralski method. Both impurities are electrically neutral, however, implantations/irradiations of Si lead to the formation of a variety of oxygen-related and carbon-related defects which introduce deep levels in the forbidden gap, inducing generally detrimental effects. Therefore, to control Si behavior for certain applications, it is important to have an understanding of the properties and fundamental processes related with the presence of these defects. To improve Si, isovalent doping during growth must be employed. Isovalent doping is an important defect-engineering strategy, particularly for radiation defects in Si. In the present review, we mainly focus on the impact of isovalent doping on the properties and behavior of oxygen-related and carbon-related defects in electron-irradiated Si. Recent experimental results from infrared spectroscopy (IR) measurements coupled with theoretical studies involving density functional theory (DFT) calculations, are discussed. Conclusions are reached regarding the role of isovalent doping (carbon, (C), germanium (Ge), tin (Sn), and lead (Pb)) on the suppression of detrimental effects introduced into Si from technologically harmful radiation clusters induced in the course of material processing.

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Section: Introductionmentioning

confidence: 99%

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

et al. 2022

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“…One of the first studies in this direction was reported by Brelot in 1972, [1] but there is still interest in this topic. [2][3][4][5][6] The main reason is that the isovalent tin impurity in silicon is one of the most efficient radiation-induced vacancy (V) traps. Therefore, it is suggested that Si:Sn can have a radiation hardening potential.…”

Section: Introductionmentioning

confidence: 99%

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

Kras'ko

Kolosiuk

Voitovych

et al. 2021

Physica Status Solidi (a)

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Herein, the results that determine some conditions for increasing the radiation hardness of 60Co gamma or 1 MeV electron‐irradiated tin‐doped n‐type Czochralski silicon (Cz n‐Si:Sn) are presented. These conditions are determined from the analysis of the formation kinetics of dominant radiation defects (namely, VO and SnV complexes) and the recombination of charge carriers through the electronic levels of these defects in samples with different concentrations of phosphorus and tin. It is shown that low‐resistivity Cz n‐Si with P doping levels >5 × 1014 cm−3 containing in addition [Sn] ≈1017–1019 cm−3 has a radiation hardening potential. In this material, the radiation degradation of carrier lifetime is several times smaller compared with Sn‐free n‐Si, whereas the conductivity compensation is negligible for both materials. The reduction of the lifetime degradation rate is due to a reduction of VO concentration in low‐resistivity Cz n‐Si:Sn.

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Research of mechanical stresses in irradiated tin-doped silicon crystals

Cited by 2 publications

References 23 publications

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

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Research of mechanical stresses in irradiated tin-doped silicon crystals

Cited by 2 publications

References 23 publications

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

Comparative Study of Oxygen- and Carbon-Related Defects in Electron Irradiated Cz–Si Doped with Isovalent Impurities

Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness

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Carrier Lifetime in ⁶⁰Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness