Research methods of reliability indicators of rectifier diode in tablet execution

Abstract

Abstract.A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the statistical data.

Thermal Analysis of Power Transformer

“…Utilization of the methods in predicting electrical devices POF reliability allows minimizing the number of acceptance tests. Thus the methods based on the physics of failure [9][10][11][12][13][14], may be the important component concepts of PDfR (PDfR -Probabilistic Design for Reliability) [15] and DRM (DRM -Dynamic Reliability Management) [16].…”