Research advances of electrochemical micro/nanofabrication based on confined etchant layer technique

Han, Lianhuan; He, Quanfeng; Zhao, Xuesen; Cao, Yongzhi; Hu, Zhenjiang; Yan, Yongda; Zhang, Tian

doi:10.1360/n032016-00217

“…As CELT is a distance sensitive technique, high position resolutions and low repeatability errors is top priority for the machining platform to achieving nanoscale machining accuracy. A typical CELT instrument, represented in Figure , is composed of various subsystems, including a multidimensional and multiscale positioning and manipulating system, an electrochemical system, and a real-time detection and feedback control system. ,, The positioning and manipulating system is equipped with two linear positioning stages with air-bearing guides, linear motor drives, and closed-loop feedback control systems to ensure a positioning resolution of 5 nm and a repeatability of less than 0.5 μm/100 mm in the XY direction, as well as a macro-micro dual driven positioning strategy in the Z -axis platform utilizing a displacement platform composed of a ball screw, a cross-roller guide unit, and a stepper motor, and a piezoelectric stage, achieving nanometer-level positioning and repeatability within a large travel range (100 mm). Additionally, an air-bearing rotary stage ( C -axis) is adopted for an extra degree of motion.…”

Section: Instrumental Developments Of Celtmentioning

confidence: 99%

Confined Etchant Layer Technique: An Electrochemical Approach to Micro-/Nanomachining

Han

¹

,

Xu

²

,

Shi

³

et al. 2023

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Historically electrochemistry plays an important role in the machinery processing industry, especially for hard-tomachine materials and profiled structures. Nowadays, the challenge remains for electrochemical machining to meet the requirements of micro-/nanomanufacturing because the feature size and machining accuracy are downsized to micro-/nanometer scale. Confined etchant layer technique (CELT), proposed by Prof. Zhao-Wu Tian in the early 1990s, is a forward-looking electrochemical micro-/ nanomachining for both the fabrications of three-dimensional micro-/nanostructures (3D-MNSs) and the polishing of supersmooth surfaces. Through a subsequent coupling chemical reaction between the electrogenerated etchant and the scavenger (i.e., EC reaction), the diffusion distance of the etchant is "confined" at micrometer or even nanometer scale and, thus, ensures the machining accuracy. The advantage of CELT lies in that it can work on the workpieces directly free of auxiliary processes, tool wear, residual stress, surface and subsurface damages, etc., and without considering the hardness, softness, and fragileness as well as the conductivity. This Review will present the systematic developments of CELT over the past 30 years, including theories, instruments, methodologies, and applications.

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Direct Nanomachining on Semiconductor Wafer By Scanning Electrochemical Microscopy

Han

¹

,

Hu

²

,

Sartin

³

et al. 2020

Angewandte Chemie

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Scanning electrochemical microscopy (SECM) is one of the most important instrumental methods of modern electrochemistry due to its high spatial and temporal resolution. We introduced SECM into nanomachining by feeding the electrochemical modulations of the tip electrode back to the positioning system, and we demonstrated that SECM is a versatile nanomachining technique on semiconductor wafers using electrochemically induced chemical etching. The removal profile was correlated to the applied tip current when the tip was held stationary and when it was moving slowly (<20 μm s−1), and it followed Faraday's law. Both regular and irregular nanopatterns were translated into a spatially distributed current by the homemade digitally controlled SECM instrument. The desired nanopatterns were “sculpted” directly on a semiconductor wafer by SECM direct‐writing mode. The machining accuracy was controlled to the sub‐micrometer and even nanometer scales. This advance is expected to play an important role in electrochemical nanomachining for 3D micro/nanostructures in the semiconductor industry.

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Direct Nanomachining on Semiconductor Wafer By Scanning Electrochemical Microscopy

Han

¹

,

Hu

²

,

Sartin

³

et al. 2020

Self Cite

View full text Add to dashboard Cite

Scanning electrochemical microscopy (SECM) is one of the most important instrumental methods of modern electrochemistry due to its high spatial and temporal resolution. We introduced SECM into nanomachining by feeding the electrochemical modulations of the tip electrode back to the positioning system, and we demonstrated that SECM is a versatile nanomachining technique on semiconductor wafers using electrochemically induced chemical etching. The removal profile was correlated to the applied tip current when the tip was held stationary and when it was moving slowly (<20 μm s−1), and it followed Faraday's law. Both regular and irregular nanopatterns were translated into a spatially distributed current by the homemade digitally controlled SECM instrument. The desired nanopatterns were “sculpted” directly on a semiconductor wafer by SECM direct‐writing mode. The machining accuracy was controlled to the sub‐micrometer and even nanometer scales. This advance is expected to play an important role in electrochemical nanomachining for 3D micro/nanostructures in the semiconductor industry.

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Research advances of electrochemical micro/nanofabrication based on confined etchant layer technique

Abstract: Micro and Nanofabrication methods to control cell-substrate interactions and cell behavior: A review from the tissue engineering perspective Bioactive Materials 3, 355 (2018); Single-molecule analysis in an electrochemical confined space

Cited by 3 publications

References 14 publications

Confined Etchant Layer Technique: An Electrochemical Approach to Micro-/Nanomachining

Confined Etchant Layer Technique: An Electrochemical Approach to Micro-/Nanomachining

Direct Nanomachining on Semiconductor Wafer By Scanning Electrochemical Microscopy

Direct Nanomachining on Semiconductor Wafer By Scanning Electrochemical Microscopy

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