Report on 4H–SiC JTE Schottky diodes

Chen, Li; Guy, Owen J.; Doneddu, Daniele; Batcup, S.; Wilks, S.P.; Mawby, P.A.; Bouchet, Thierry; Torregrosa, Frank

doi:10.1016/j.microrel.2005.07.006

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“…Several studies concerning these properties have been reported in the literature [2][3][4][5]. Of particular interest is the study of the physical properties of its junctions with metals, since the reliability of the devices highly depends on the stability of their contacts [6][7][8][9][10][11][12]. In the present work, electron microscopy and atomic force microscopy (AFM) are used to clarify which are the experimental conditions for the growth of Pd thin films on 6H-SiC.…”

Section: Introductionmentioning

confidence: 99%