Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

Radisavljevic, Branimir; Kis, András

doi:10.1038/nnano.2013.31

Cited by 111 publications

(124 citation statements)

References 5 publications

(5 reference statements)

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“…Previously, there has been some controversy regarding the mobility calculation of nanodevices when covered by a high-k dielectric layer and a metal top gate 45,46 . However, in this work, the small diameter GaSb NWFET is configured in a global back-gated geometry, and is not covered with any high-k dielectric layer and the metal top gate.…”

Section: Resultsmentioning

confidence: 99%

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

et al. 2014

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Although various device structures based on GaSb nanowires have been realized, further performance enhancement suffers from uncontrolled radial growth during the nanowire synthesis, resulting in non-uniform and tapered nanowires with diameters larger than few tens of nanometres. Here we report the use of sulfur surfactant in chemical vapour deposition to achieve very thin and uniform GaSb nanowires with diameters down to 20 nm. In contrast to surfactant effects typically employed in the liquid phase and thin-film technologies, the sulfur atoms contribute to form stable S-Sb bonds on the as-grown nanowire surface, effectively stabilizing sidewalls and minimizing unintentional radial nanowire growth. When configured into transistors, these devices exhibit impressive electrical properties with the peak hole mobility of B200 cm 2 V À 1 s À 1 , better than any mobility value reported for a GaSb nanowire device to date. These factors indicate the effectiveness of this surfactant-assisted growth for high-performance small-diameter GaSb nanowires.

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Section: Resultsmentioning

confidence: 99%

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

et al. 2014

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“…1,10,17,18,23,24 The highest values have been obtained in top-gated samples with a high-κ gate dielectric, 10,24 indicating that impurity scattering can be strongly suppressed by dielectric engineering, 25 and mobilities close to the theoretically predicted intrinsic phonon-limited mobility of ∼410 cm 2 V −1 s −1 can be achieved. 26 Other theoretical studies have addressed different issues related to the performance of monolayer MoS 2 transistors.…”

Section: Introductionmentioning

confidence: 83%

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

2013

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We theoretically study the acoustic phonon limited mobility in n-doped two-dimensional MoS2 for temperatures T < 100 K and high carrier densities using the Boltzmann equation and firstprinciples calculations of the acoustic electron-phonon (el-ph) interaction. In combination with a continuum elastic model, analytic expressions and the coupling strengths for the deformation potential and piezoelectric interactions are established. We furthermore show that the deformation potential interaction has contributions from both normal and umklapp processes and that the latter contribution is only weakly affected by carrier screening. Consequently, the calculated mobilities show a transition from a high-temperature µ ∼ T −1 behavior to a stronger µ ∼ T −4 behavior in the low-temperature Bloch-Grüneisen regime characteristic of unscreened deformation potential scattering. Intrinsic mobilities in excess of 10 5 cm 2 V −1 s −1 are predicted at T < 10 K and high carrier densities (n 10 11 cm −2 ). At 100 K, the mobility does not exceed ∼ 7 × 10 3 cm 2 V −1 s −1 . Our findings provide new and important understanding of the acoustic el-ph interaction and its screening by free carriers, and is of high relevance for the understanding of acoustic phonon limited mobilities in general.

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“…Experimentally, room temperature mobilities in the range 1-200 cm 2 /Vs in n-type monolayer MoS 2 samples have been reported. 5,22,23 Dielectric engineering has been used to achieve the highest mobilities in top gated samples with high-κ gate dielectrics. In this case, the scattering due to impurities can be drastically suppressed by screening 24 and mobilities close to intrinsic phonon-limited mobility of ∼ 410 cm 2 /Vs can be achieved.…”

Section: -8mentioning

confidence: 99%

Hot-electron cooling by acoustic and optical phonons in monolayers ofMoS2and other transition-metal dichalcogenides

2014

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We study hot-electron cooling by acoustic and optical phonons in monolayer MoS2. The cooling power P (Pe = P/n) is investigated as a function of electron temperature Te (0-500 K) and carrier density n (10 10 -10 13 cm −2 ) taking into account all relevant electron-phonon (el-ph) couplings. We find that the cross over from acoustic phonon dominated cooling at low Te to optical phonon dominated cooling at higher Te takes place at Te ∼ 50 − 75 K. The unscreened deformation potential (DP) coupling to the TA phonon is shown to dominate P due to acoustic phonon scattering over the entire temperature and density range considered. The cooling power due to screened DP coupling to the LA phonon and screened piezoelectric (PE) coupling to the TA and LA phonons is orders of magnitude lower. In the Bloch-Grüneisen (BG) regime, P ∼ T 4 e (T 6 e ) and P ∼ n −1/2 (Pe ∼ n −3/2 ) are predicted for unscreened (screened) el-ph interaction. The cooling power due to optical phonons is dominated by zero-order DP couplings and the Fröhlich interaction, and is found to be significantly reduced by the hot-phonon effect when the phonon relaxation time due to phonon-phonon scattering is large compared to the relaxation time due to el-ph scattering. The Te and n dependence of the hot-phonon distribution function is also studied. Our results for monolayer MoS2 are compared with those in conventional two-dimensional electron gases (2DEGs) as well as monolayer and bilayer graphene.

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Reply to 'Measurement of mobility in dual-gated MoS2 transistors'

Cited by 111 publications

References 5 publications

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2from first principles

Hot-electron cooling by acoustic and optical phonons in monolayers ofMoS2and other transition-metal dichalcogenides

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