Reply on the “critical comments on speculations with … free-volume defects … in ion-conducting Ag/AgI–As2S3 glasses…”

Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description

“…Further, this value was even more underestimated to V = 42 Å 3 (R = 2.16 Å) using linear Eq. (3) [22], despite  2 value (0.36 ns) was clearly higher than the characteristic limit of zeolite-type environment (0.26 ns).…”

“…In [22,23], these Eqs. (2) and (3) were accepted in the same unchanged form for all other kinds of materials, in part, for ChVS, which were imagined, irrespectively to principal chalcogen environment, as full chemical analogues of typical polymers.…”

“…This speculation allows incorrectly equilibrate void volumes responsible for positron trapping in ChVS and polymers [16]. Thus, the defect lifetime  2 = 0.36 ns in glassy gAs 2 S 3 [3,4,7,22] was attributed in respect to Eq. (2) to spherical voids of only V  57 Å 3 in a volume (R = 2.36 Å).…”

“…While ChVS form specific class of inorganic polymers possessing long inter-chain linking due to multiple chalcogen-chalcogen bonding [11], the approach [22] assuming equivalency of Eq. (2) for both organic and inorganic polymers seems simply wrong.…”

“…In spite of obvious difference between both these methods, a crude speculative attempt to ignore the first calculation approach in a favor of the second estimation one has been made recently [22,23]. Thus, in [23], the modified sequent  3 - 2 -R correlation was utilized as a basis of the generalized void-size-determination procedure for a wide range of materials, involving molecular substrates, such as polymers, as well as inorganic disordered solids like ChVS.…”