Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells

Li, Qiang; Tao, Ke; Sun, Yun; Jia, Rui; Wang, Shao-Meng; Jin, Zhi; Liu, Xinyu

doi:10.1016/j.solener.2016.06.012

Cited by 17 publications

(8 citation statements)

References 26 publications

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“…However, with a reduced doping concentration of ∼1 × 10 17 cm –3 in the poly-Si(n) layer, the “threshold” SiO x thickness for the device to function becomes narrower (∼1.1 nm); the optimal thickness in that case also decreases to ∼0.9 nm. These theoretical results may explain why experimental high-efficiency c -Si solar cells have been reported with different SiO x thicknesses, ranging from 1.1 to 1.7 nm. ,,,, It is noteworthy that the simulations in this work did not take into account the shallow diffusion into the c -Si wafer from the poly-Si( n ) layer. Accounting for a slight doping tail into the c -Si wafer may increase the tunneling probability, and alter our results slightly but not fundamentally.…”

Section: Results and Discussionmentioning

confidence: 90%

“…At even higher temperatures, the hydrogen present in the bulk of the amorphous matrix also effuses out, explaining the typical presence of two hydrogen effusion peaks when a -Si:H films are annealed at increasingly higher temperatures. Upon such effusion, the a -Si matrix tends to relax into large poly-Si grains …”

Section: Results and Discussionmentioning

confidence: 99%

“…Upon such effusion, the a-Si matrix tends to relax into large poly-Si grains. 47 Figure 1c shows the τ eff of n-type c-Si substrate passivated by both poly-Si(p)/SiO x and poly-Si(n)/SiO x contacts as a function of annealing temperature. All τ eff measurements are conducted after the forming gas annealing.…”

Section: Resultsmentioning

confidence: 99%

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Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Liu

Yang

Kang

et al. 2019

ACS Appl. Energy Mater.

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Poly-silicon passivating contacts, consisting of a stack of tunnel-oxide and doped poly-silicon layers, can simultaneously provide excellent surface passivation and low contact resistivity for silicon solar cells. Nevertheless, the microscopic interfacial characteristics of such contacts are not yet fully understood. In this work, by investigating the surface passivation evolution of poly-silicon passivating contacts under increasing annealing temperatures, we unveil these characteristics. Before annealing, we find that the Si and O atoms within the tunneloxide layer are mostly unsaturated, whereas the O atoms introduce acceptor-like defects. These defects cause Fermi-level pinning and high carrier recombination. During annealing, we identify two distinct chemical passivation regimes driven by surface hydrogenation and oxidation. We attribute the excellent chemical passivation activated by high-temperature annealing (850°C) mainly to the tunnel oxide reconstruction, which effectively reduces the acceptor-like state density. During the oxide reconstruction, we also find that sub-nanometer pits (rather than pinholes) are formed in the oxide. A combination of experimental and theoretical investigations demonstrates these sub-nanometer pits provide excellent surface passivation and efficient tunneling for majority carriers.

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Section: Results and Discussionmentioning

confidence: 90%

Section: Results and Discussionmentioning

confidence: 99%

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Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Liu

Yang

Kang

et al. 2019

ACS Appl. Energy Mater.

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“… 15 Li et al replaced amorphous layer with microcrystalline silicon layer to avoid the blister of Si layer and the balling-up of SiO x during thermal treatment, resulting in improved passivation. 16 Ke et al applied a hybrid structure containing amorphous and microcrystalline double layers to maintain good passivation property and high fraction of crystallization with no blistering. With such a hybrid layer in devices, the implied V oc of 716 mV and conversion efficiency (CE) of 15.09% were obtained.…”

Section: Introductionmentioning

confidence: 99%

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

et al. 2022

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“…In addition, single-sided deposition simplifies solar cell manufacturing [19]. To reduce the hydrogen blistering that occurs during this process [20], a step-by-step heat treatment process was applied. Furthermore, the feasibility of perovskite/silicon tandem solar cells was confirmed by measuring the external quantum efficiency (EQE) of the bottom cell with light transmitted through the perovskite top cell.…”

Section: Introductionmentioning

confidence: 99%

Amorphous Silicon Thin Film Deposition for Poly-Si/SiO2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

et al. 2021

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Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.

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Replacing the amorphous silicon thin layer with microcrystalline silicon thin layer in TOPCon solar cells

Cited by 17 publications

References 26 publications

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

Improved interface passivation by optimizing a polysilicon film under different hydrogen dilution in N-type TOPCon silicon solar cells

Amorphous Silicon Thin Film Deposition for Poly-Si/SiO2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

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