Removing Organic Residues Using Backside Brush Scrubber Clean

Chauhan, Kripa Nidhan; Sih, Vincent; Bhat, Talapady Srivatsa; Kang, Min Hyo; Kabutoya, Eiji; Cheng, Gordon

doi:10.1149/06908.0109ecst

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…After which, another scanning brush is utilized with DIW. 27,30) Subsequently, an organic underlayer, with a film thickness of 20 nm, was spin-coated onto the wafers. After spin coating, the underlayer was baked at 205 °C for 60 s. Following this, a photoresist was spin-coated at a film thickness of 36 nm over the underlayer and baked at 110 °C for 60 s, forming a bilayer stack.…”

Section: Patterning Experimentsmentioning

confidence: 99%

Pattern deformation mitigation for EUV photoresists using wafer backside cleaning techniques

Harumoto,

Figueiredo dos Santos,

Zanders

et al. 2024

Jpn. J. Appl. Phys.

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This study delves into the effects of wafer backside particles on pattern defocus in extreme ultraviolet lithography (EUVL). Additionally, the potential mitigation of this pattern defocus was examined through wafer backside cleaning. Comparative analyses were conducted between EUVL patterning tests performed using wafers with contaminated and cleaned wafer backside. Defocus points and abnormal critical dimensions (CDs) on the photoresist patterns at the wafer frontside were detected using scanning electron microscopy and optical CD measurement, respectively. The specific locations of these defocus or abnormal CD points were compared and confirmed to be correlated with particles that were present on the same locations on the backside of the wafer. Furthermore, it was found that an effective backside cleaning process can mitigate pattern defocus caused by these wafer backside particles.

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Section: Patterning Experimentsmentioning

confidence: 99%

Pattern deformation mitigation for EUV photoresists using wafer backside cleaning techniques

Harumoto,

Figueiredo dos Santos,

Zanders

et al. 2024

Jpn. J. Appl. Phys.

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“…Therefore, an effective and optimized wet cleans process with very high particle removal efficiency (PRE) is desired during the wet cleans [3]. Complete surface cleaning can be achieved by combining the actions of previously mentioned chemistries, optimizing their flows and physical forces [4,5,6]. In this work, we evaluated two recipes (CIP1 and CIP2) in order to improve the PRE of the wet cleaning process during wet rework of photoresist coated wafers.…”

Section: Introductionmentioning

confidence: 99%

Removal of Bull’s Eye Signature by Optimizing Wet Cleans Recipe

Bhattacharyya

Muralidhar

Conrad

2016

SSP

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As the semiconductor device technology is moving toward increasingly smaller nodes, it is becoming more challenging to keep the wafers free from contamination of even smaller particles. Wet cleaning process takes a major role in keeping the wafers clean, especially in post-RIE cleans. However, as every other process, wet cleaning also contributes some defects as adders which can potentially cause significant yield killer defects. A cluster of defects, classified as incomplete etch, was observed at the center of the wafer with a wet clean recipe (CIP1) since the adders from this recipe were not allowing the etch process and rendering incomplete etch defects. In this work, we optimized this CIP1 recipe to eliminate defects with the bull’s eye signature at the wafer center and widened the process window of this type of wet cleaning process. The new recipe (CIP2) showed 100% success rate while CIP1 recipe had an occurrence of 35% failure for the bull’s eye signature on the similar quality and quantity of wafers.

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