2019
DOI: 10.1021/acs.jpcc.9b02371
|View full text |Cite
|
Sign up to set email alerts
|

Removal of Surface Oxygen Vacancies Increases Conductance Through TiO2 Thin Films for Perovskite Solar Cells

Abstract: We report that UV–ozone treatment of TiO2 anatase thin films is an efficient method to increase the conductance through the film by more than 2 orders of magnitude. The increase in conductance is quantified via conductive scanning force microscopy on freshly annealed and UV–ozone-treated TiO2 anatase thin films on fluorine-doped tin oxide substrates. The increased conductance of TiO2 anatase thin films results in a 2% increase of the average power conversion efficiency (PCE) of methylammonium lead iodide-based… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

2
59
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 69 publications
(61 citation statements)
references
References 43 publications
2
59
0
Order By: Relevance
“…We note that O 2 plasma treatment was performed because the TiO 2 ‐HCl film contains both surface and bulk (within TiO 2 nanoparticle; lower right in Figure a) oxygen vacancies, both of which increase the donor density of TiO 2 when employed as the ETL in PSC . The bulk vacancies improve the bulk conductivity, while the surface vacancies trigger the charge carrier recombination . Thus, removing surface vacancies yet retaining bulk vacancies in TiO 2 ETL by O 2 plasma exposure may lead to further improved performance of PSCs owing to suppressed photogenerated electron–hole recombination and the enhanced bulk conductivity.…”
Section: Resultsmentioning
confidence: 99%
“…We note that O 2 plasma treatment was performed because the TiO 2 ‐HCl film contains both surface and bulk (within TiO 2 nanoparticle; lower right in Figure a) oxygen vacancies, both of which increase the donor density of TiO 2 when employed as the ETL in PSC . The bulk vacancies improve the bulk conductivity, while the surface vacancies trigger the charge carrier recombination . Thus, removing surface vacancies yet retaining bulk vacancies in TiO 2 ETL by O 2 plasma exposure may lead to further improved performance of PSCs owing to suppressed photogenerated electron–hole recombination and the enhanced bulk conductivity.…”
Section: Resultsmentioning
confidence: 99%
“…Oxygen has been shown to fill oxygen vacancies on the surface of TiO 2 or SnO 2 , either during the annealing process or upon oxygen plasma treatment which can be beneficial for the operation of PSCs. [231][232][233] Despite this, ZnO has often been introduced as an alternative metal oxide ETL due to its low processing temperature [170] and high electron mobility. [234] Unlike TiO 2 and SnO 2 , ZnO has been found to have undesirable side effects with MAPbI 3 where the nature of the ZnO surface leads to proton-transfer reactions at the ZnO/MAPbI 3 interface.…”
Section: Electron Transport Layermentioning
confidence: 99%
“…Correspondingly, OVs are present on the surface to maintain the charge equilibrium. In the O 1s spectra (Figure 5d), the main peak of O 1s at 529.9 eV is assigned to TiO lattice bond without nearby OVs, [ 26 ] while the shoulder peak at 531.8 eV belongs to O‐atoms in the vicinity of an O‐vacancy. [ 12a ] It has been reported that OVs may induce dissociation of H 2 O and chemisorption of OH ‐ at OV sites.…”
Section: Resultsmentioning
confidence: 99%