2000
DOI: 10.1016/s0254-0584(99)00190-x
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Removal of Fe impurities on the Si substrate using remote hydrogen plasma

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Cited by 2 publications
(1 citation statement)
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“…The cleaning mechanism of hydrogen plasma on metal impurities, namely copper (Cu), iron (Fe) and potassium (K), on a Si substrate has been revealed [21]. Cu, K and Fe impurity atoms which coexist with the chemical and/or native oxides on the Si wafer surface are eliminated together when the oxides are removed by hydrogen plasma [22]. However, this chemical mechanical polishing method is different from the mechanism of chemical reaction cleaning of tin by hydrogen plasma.…”
Section: Introductionmentioning
confidence: 99%
“…The cleaning mechanism of hydrogen plasma on metal impurities, namely copper (Cu), iron (Fe) and potassium (K), on a Si substrate has been revealed [21]. Cu, K and Fe impurity atoms which coexist with the chemical and/or native oxides on the Si wafer surface are eliminated together when the oxides are removed by hydrogen plasma [22]. However, this chemical mechanical polishing method is different from the mechanism of chemical reaction cleaning of tin by hydrogen plasma.…”
Section: Introductionmentioning
confidence: 99%