Removal of amorphous C and Sn on Mo:Si multilayer mirror surface in Hydrogen plasma and afterglow

Abstract

Removal of amorphous carbon and tin films from a Mo:Si multilayer mirror surface in a hydrogen plasma and its afterglow is investigated. In the afterglow, the mechanism of Sn and C films removal is solely driven by hydrogen atoms (radicals). Probabilities of Sn and C atoms removal by H atoms were measured. It was shown that the radical mechanism is also dominant for Sn atoms removal in the hydrogen plasma because of the low ion energy and flux. Unlike for Sn, the removal mechanism for C atoms in the plasma is ion-stimulated and provides a much higher removal rate.

Control of YH3 formation and stability via hydrogen surface adsorption and desorption

“…Although Pd can dissociate molecular hydrogen, the H 2 splitting efficiency of a hot W filament is much higher, thus, hydrogenation occurs faster in the latter case. The hydrogen radical flux was estimated from the etch rate of a carbon film to be 10 18 at/cm 2 /s [12]. The sample temperature was monitored using a K-type thermocouple, and maintained at 30-40°C by water cooling.…”

Metal diffusion properties of ultra-thin high-k Sc2O3 films

“…The H · flux is generated by passing a molecular hydrogen flow (100 sccm) over a tungsten (W) filament that is heated to 2000 • C. The hydrogen radical flux was calculated to be 10 17 at /s·cm 2 at the sample surface from the measured carbon etching rate, following the method used in ref. 15. The temperature of the sample was monitored using a Pt-100 temperature sensor, mounted on the backside of the sample.…”

“…To remove surface contaminants, the samples were sputtered with a dose of 4·10 15 3 keV He + ions/cm 2 before analysis. The LEIS spectra after sputtering are presented in Figure 1.…”

Modeling of Single and Dual Frequency Capacitive Discharge in Argon Hydrogen Mixture − Dynamic Effects and Ion Energy Distribution Functions

“…RF discharges in the mixture of hydrogen with noble gases have used in various industrial applications, such as etching processes, surface passivation, films deposition, photoresist stripping in strip technology of new low‐k materials, Extreme UltraViolet (EUV) lithography for multi‐layer mirror cleaning . The interest to the study of ion‐molecular reactions in Ar/H 2 mixtures is also supported by the using of these mixtures in Fusion Devices (ArH + ions are probably responsible for the enhanced rate of carbon film removal in comparison with that of in pure hydrogen plasma) and by fundamental problem of the origin of emission spectra from the Crab Nebula .…”