Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

Hellriegel, Ronald; Albert, Matthias; Hintze, B.; Winzig, Hubert; Bartha, Johann W.

doi:10.1016/j.mee.2006.08.002

Cited by 14 publications

(6 citation statements)

References 8 publications

(5 reference statements)

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“…This is in good agreement with the results reported by Hellriegel et al 41 who have attributed the minder effectiveness of NF 3 / Cl 2 mixture to etch Ti compared to pure NF 3 plasma to the formation of ClF molecules which loads the F atoms density. This is in good agreement with the results reported by Hellriegel et al 41 who have attributed the minder effectiveness of NF 3 / Cl 2 mixture to etch Ti compared to pure NF 3 plasma to the formation of ClF molecules which loads the F atoms density.…”

Section: A Etching Of Blanket Tin Waferssupporting

confidence: 93%

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Ramos

Cunge

Joubert

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors have investigated the etch chamber recovery after TiN, TaN, and HfO 2 metal gate etching processes. The deposits formed on the reactor walls after etching these materials in various chemistries have been analyzed by x-ray photoelectron spectroscopy. They found that after a complete polysilicon/metal/high-k gate stack patterning process, the reactor walls are typically covered by a composite layer such as SiOCl x -MO -HfBCl x ͑where M is the metal͒. The SiOCl x layer is deposited on the reactor walls during silicon etching ͑HBr/ Cl 2 / O 2 plasma͒; it is subsequently covered by a halogen-rich metal oxide layer during the metal etch step and, finally, by a BCl x polymer containing traces of Hf deposited during HfO 2 etching ͑in a BCl 3 plasma͒. They have then investigated the best plasma chemistry to clean the reactor walls after these processes. In particular, they have analyzed the efficiency of several plasma cleaning chemistries to remove each metal from the reactor walls. This allowed them to conclude that after a metal gate etching process, a two step cleaning strategy is required in most cases to remove the deposit from the reactor walls. A Cl 2 plasma is first used to remove the HfBCl x layer and the Ta coatings ͑in the case of TaN etching͒, and it is followed by a SF 6 / O 2 plasma that is able to remove Ti and SiOCl x deposits from the reactor walls. This two step cleaning strategy will always restore clean chamber conditions before processing the next wafer, thus ensuring a good wafer-to-wafer reproducibility.

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Section: A Etching Of Blanket Tin Waferssupporting

confidence: 93%

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Ramos

Cunge

Joubert

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The following examples should be listed here: titanium and its alloys, titanium nitride, yttrium fluoride film, silicone rubber. [ 22–26 ] However, all published studies do not exhaust the issue and do not reveal the potential of this modification method.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Chemical Composition and Topography of the Ti6Al7Nb Surface Etched in Fluorine Plasma on Its Selected Properties

2023

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Herein, a new way of the surface modification of Ti6Al7Nb alloy in fluorine plasma is presented using the mask made of stainless steel and its influence on the selected properties, including chemical composition, topography, and tribological ones. Depending on the etching process parameters, different characteristics of the surfaces are obtained. The higher is the value of the negative bias, the less fluorine concentration on the etched surface and higher etching rates. Etching using the SF6 gas shows bigger etching rates in comparison to the etching using the CF4 gas. Chemical composition of the modified surfaces shows greater impact on tribological characteristics than topography parameters. The lowest wear rate is observed for the sample modified using the CF4 gas.

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“…Silicon nitride RRAM using doped silicon as a bottom electrode has been presented before, but many RRAM studies prefer bottom electrodes made out of metal to reduce line resistance in crosspoint arrays. We formed the electrode using TiN metal, this is a CMOS fabrication friendly material thanks to it being dryetchable [40]- [42]. By comparing the differences in performance between our device with an Ag insertion layer and a standard TiN/SiNx/TiN device as a control group, we were able to identify advances in power consumption and current level controllability.…”

Section: Introductionmentioning

confidence: 99%

Insertion of Ag Layer in TiN/SiN_x/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

et al. 2020

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Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

Cited by 14 publications

References 8 publications

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Influence of the Chemical Composition and Topography of the Ti6Al7Nb Surface Etched in Fluorine Plasma on Its Selected Properties

Insertion of Ag Layer in TiN/SiN_x/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

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Remote plasma etching of titanium nitride using NF3/argon and chlorine mixtures for chamber clean applications

Cited by 14 publications

References 8 publications

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Influence of the Chemical Composition and Topography of the Ti6Al7Nb Surface Etched in Fluorine Plasma on Its Selected Properties

Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

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Product

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Insertion of Ag Layer in TiN/SiN_x/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation