Remote p-type Doping in GaSb/InAs Core-shell Nanowires

Feng, Na; Tang, Li‐Ming; Zhang, Yong; Chen, Ke‐Qiu

doi:10.1038/srep10813

Cited by 11 publications

(9 citation statements)

References 44 publications

(60 reference statements)

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“…Theoretical methods, such as first-principles methods, [28][29][30][31] k · p method, [32][33][34] pseudopotential methods, [35], and tight-binding methods [36][37][38][39][40][41][42][43][44] [47][48][49][50] have been proved to be more powerful for the calculations of the electronic structures of semiconductor nanowires with diameters in the range of a few nanometers to more than 100 nanometers in the whole Brillouin zone.…”

Section: Methods Of Calculationsmentioning

confidence: 99%

Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires

Liao¹,

Luo²,

Chen³

et al. 2016

J. Phys.: Condens. Matter

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We report on a theoretical study of the electronic structures of the [111]-oriented, free-standing, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp 3 s * , spin-orbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C3v double point group. It is shown that all bands of these nanowires are doubly degenerate at the Γ-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the Γ-point as a manifestation of spin-splitting due to spin-orbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show 2π/3-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [111]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.

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Section: Methods Of Calculationsmentioning

confidence: 99%

Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires

Liao¹,

Luo²,

Chen³

et al. 2016

J. Phys.: Condens. Matter

Self Cite

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“…Various methods, including density-functional-theory (DFT)2829303132, tight-binding (TB) theory252633343536373839404142, and the theory244344454647484950515253, have been used to calculate the band structure of nanowires. Among them, DFT is the first-principle method which is free from any adjustable parameters, and is therefore often the choice for electronic structure calculations.…”

Section: Methodsmentioning

confidence: 99%

“…Various methods, including density-functional-theory (DFT) [15][16][17][18][19] , tight-binding (TB) theory [20][21][22][23][24][25][26][27][28][29][30] , and the k • p theory 14,[31][32][33][34][35][36][37][38][39][40][41] , have been used to calculate the band structure of nanowires. Of the three, DFT is the only first-principle method which is free from any adjustable parameters, and therefore is often the best choice for electronic structure calculations.…”

Section: Methodsmentioning

confidence: 99%

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

Luo

Huang

Liao

et al. 2016

Sci Rep

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The [111]-oriented InAs/GaSb and GaSb/InAs core-shell nanowires have been studied by the 8 × 8 Luttinger-Kohn Hamiltonian to search for non-vanishing fundamental gaps between inverted electron and hole bands. We focus on the variations of the band-inverted fundamental gap, the hybridization gap, and the effective gap with the core radius and shell thickness of the nanowires. The evolutions of all the energy gaps with the structural parameters are shown to be dominantly governed by the effect of quantum confinement. With a fixed core radius, a band-inverted fundamental gap exists only at intermediate shell thicknesses. The maximum band-inverted gap found is ~4.4 meV for GaSb/InAs and ~3.5 meV for InAs/GaSb core-shell nanowires, and for the GaSb/InAs core-shell nanowires the gap persists over a wider range of geometrical parameters. The intrinsic reason for these differences between the two types of nanowires is that in the shell the electron-like states of InAs is more delocalized than the hole-like state of GaSb, while in the core the hole-like state of GaSb is more delocalized than the electron-like state of InAs, and both favor a stronger electron-hole hybridization.

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“…[9][10][11] For further development and optimization of devices containing nanowires, it is important to clearly understand the electronic structures of the nanowires along common crystallographic directions such as the [001] and [111] directions. Previously, theoretical methods, such as first-principles methods, [12][13][14][15] the k•p method, [16][17][18] pseudopotential methods 19 and tight-binding methods [20][21][22][23][24][25][26][27][28][29] , have been used to study semiconductor nanowires. However, first-principles calculations are impractical for unit cells containing tens of thousands of atoms.…”

Section: Introductionmentioning

confidence: 99%

Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

Liao

Luo

Chen

et al. 2016

Sci Rep

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We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP)—a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.

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Remote p-type Doping in GaSb/InAs Core-shell Nanowires

Cited by 11 publications

References 44 publications

Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires

Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires

Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

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