Remote Hydrogen Plasma Chemical Vapor Deposition of Amorphous Hydrogenated Silicon-Carbon Films from an Organosilane Molecular Cluster as a Novel Single-Source Precursor: Structure, Growth Mechanism, and Properties of the Deposit

Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1

“…2) and the resulting near-zero value of the apparent thermal activation energy, E a , calculated from the slope of the Arrhenius plot suggests that film growth is independent of the substrate temperature, and the rate of the process is mass transport-limited. Similar results, showing E a ¼ 0, are reported for RHP-CVD from the dimethylsilane, [6,9] trimethylsilane, [6,9] hexamethyldisilane, [3,5,6,9,12] and tetrakis(trimethylsilyl)silane [2,4,5] precursors.…”

“…To characterize the reactivity of particular bonds in a TrES molecule with atomic hydrogen, we performed RHP-CVD experiments, also using tetraethylsilane (TES), Et 4 Si, as a model compound representing the Si-C, C-C, and C-H bonds. To avoid an undesirable effect which might arise from the thermochemical reactions the experiments were carried out on unheated substrates.…”

“…[7] Due to these beneficial features, RHP-CVD is very promising for the production of defect-free and morphologically homogeneous a-SiC:H coatings, as proved by our earlier studies. [4,5,[10][11][12] The a-SiC:H films can effectively be produced by RHP-CVD from volatile alkylsilane compounds as single-source precursors, which are particularly beneficial because they are carriers of the Si-C bonds which are readily incorporated into the film, they are easy to convert to film-forming precursors, and they are generally non-explosive, non-flammable, non-toxic, and inexpensive. This is in contrast to the mixture of silane (SiH 4 ) with hydrocarbon which is often applied for the fabrication of the DOI: 10.1002/cvde.…”

“…They included dimethylsilane, Me 2 SiH 2 , [6,9] trimethylsilane, Me 3 SiH, [6,9] hexamethyldisilane, (Me 3 Si) 2 , [3,5,6,[9][10][11][12] tetrakis(trimethylsilyl)silane, (Me 3 Si) 4 Si, [2,[4][5][6]9] and (dimethylsilyl)(trimethylsilyl)methane, Me 3 SiCH 2 SiHMe 2 . [6,9,13,14] The present work deals with the fabrication of a-SiC:H films by RHP-CVD using triethylsilane, Et 3 SiH, (TrES) as the single-source precursor.…”

Amorphous Hydrogenated Silicon Carbide (a‐SiC:H) Coatings Produced by Remote Hydrogen Microwave Plasma CVD from Bis(dimethylsilyl)ethane ‐ a Novel Single‐Source Precursor

“…The first may be etching of the glass walls of the CVD system by atomic hydrogen, resulting in incorporation of oxygencontaining etch products into the growing film. [13] The second source may arise from the reactions of long-lived dangling bonds in the deposit with atmospheric oxygen or moisture, which may occur after the film is exposed to the ambient environment. Although some effect of low-level reactor leaking on the oxygen content can not be excluded, two previously mentioned oxygen sources seem to predominate.…”