Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates

Henksmeier, Tobias; Schulz, Jörg; Kluth, Elias; Feneberg, Martin; Goldhahn, R.; Sánchez, Ana; Voigt, Markus; Grundmeier, Guido; Reuter, D.

doi:10.1016/j.jcrysgro.2022.126756

Cited by 5 publications

(5 citation statements)

References 23 publications

(56 reference statements)

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“…Moreover, as a 2D material is a layered van der Waals (vdW) material free of dangling bonds, its weak bonding enables remote-epitaxial films to be detached at the 2D layer interface by simple mechanical exfoliation with atomic precision (3). With the increasing demand of freestanding membranes for both research and industry, the remote epitaxy community has rapidly grown over the past few years (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20). Various families of materials including III-V (1,(4)(5)(6)(7), III-N (2,(8)(9)(10)(11), and complex oxide (12)(13)(14)(15)(16) thin films have been grown and detached from the substrate, and these films have served as fundamental building blocks for stateof-the-art devices by overcoming the limitations of conventional epitaxy (1).…”

Section: Introductionmentioning

confidence: 99%

“…With the increasing demand of freestanding membranes for both research and industry, the remote epitaxy community has rapidly grown over the past few years (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20). Various families of materials including III-V (1,(4)(5)(6)(7), III-N (2,(8)(9)(10)(11), and complex oxide (12)(13)(14)(15)(16) thin films have been grown and detached from the substrate, and these films have served as fundamental building blocks for stateof-the-art devices by overcoming the limitations of conventional epitaxy (1). Fields to which these films have been recently applied include infrared photodetectors (17), vertically stacked micro-lightemitting diodes (18), heterostructured devices (19), and flexible electronics (20).…”

Section: Introductionmentioning

confidence: 99%

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Remote epitaxial interaction through graphene

Chang,

Kim,

Park

et al. 2023

Sci. Adv.

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The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO 3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Remote epitaxial interaction through graphene

Chang,

Kim,

Park

et al. 2023

Sci. Adv.

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“…Remote epitaxy has been demonstrated in the growth of various ionic compounds such as III–V, II–VI, and I–VII, complex oxides, halide perovskites, etc. ,,− Among them, commercial manufacturing typically uses metal–organic chemical vapor deposition (MOCVD) at high temperature (over 1000 °C) under a hydrogen atmosphere for the growth of III–nitrides, such as GaN, AlN, and AlGaN. However, a recent study by Park et al revealed that the harsh conditions required for MOCVD growth of GaN can instigate thermochemical decomposition of both graphene and underlying nitrides, thereby limiting the full exploitation of remote epitaxy for III–nitrides-based devices.…”

Section: Introductionmentioning

confidence: 99%

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

Choi,

Jeong,

Zhu

et al. 2023

ACS Nano

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In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal–organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p–n junction μCs with InGaN heterostructures.

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“…This allows either the reuse of expensive substrates or the transfer of thin epitaxial layers to host substrates in systems where no selective etching process for releasing the layer exists, for example, the GaN/AlN system. The remote heteroepitaxy approach has been shown to be effective for various materials, including wurtzite, nitrides, [6] and arsenides, [7,8] using growth techniques such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy

Littmann

Reuter

2023

Physica Status Solidi (b)

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Remote epitaxy is a relatively new area of research that offers several advantages, including the potential to reduce the influence of lattice mismatch and the ability to exfoliate films easily. This work is focused on adapting this growth method for the epitaxy of cubic gallium nitride (c‐GaN), a metastable phase. However, one faces challenges in enforcing the nucleation of the metastable cubic phase due to the weaker interactions between the substrate and the epitaxial layer compared to conventional epitaxy. Initially, only polycrystalline wurtzite gallium nitride could be grown. However, by optimizing the growth conditions and adding a cubic aluminum nitride buffer layer, predominantly cubic gallium nitride layers can be grown. High‐resolution X‐ray diffraction measurements confirm that the percentage of hexagonal inclusions is reduced from 80% to 23%.

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Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates

Cited by 5 publications

References 23 publications

Remote epitaxial interaction through graphene

Remote epitaxial interaction through graphene

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy

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