Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrO<sub>x</sub>Gate Insulator

Bukke, Ravindra Naik; Avis, Christophe; Mude, Narendra Naik; Jang, Jin

doi:10.1109/led.2018.2791633

Cited by 43 publications

(76 citation statements)

References 19 publications

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“…The transfer curves were measured by sweeping gate voltage from −3 to +3 V at the same drain voltage (V ds = 0.1 V). [38,53] Note that there is no change in the SS even after PBS for 1 h, which indicates less trapping sites at the interface. All the devices show the positive transfer shift under positive bias stress, the positive shift is understood by the trapping of electrons at the Ga-doped IZTO/gate insulator interface.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…[38,53] Note that there is no change in the SS even after PBS for 1 h, which indicates less trapping sites at the interface. [38,53] Figure 6e shows that Ar/O 2 plasma treatment reduces the O vacancy, and O-H concentrations. The ΔV th as a function of stress time for Ga-doped IZTO TFTs is shown in Figure S3, Supporting Information.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…[48][49][50][51][52] In our study, the V th shift of only 0.03 V is measured for the 30 s plasma-treated 10% Ga-doped IZTO TFT, indicating that its superior stability. [5,53] Reported plasma-treated oxide TFTs are summarized in Table S4, Supporting Information. Evolution of transfer curves of 30 s Ar/O 2 plasma-treated 10% Ga-doped IZTO TFTs under negative bias stress is shown in Figure S4, Supporting Information.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

“…

their high optical transparency and high mobility. [24][25][26][27][28][29][30][31][32] IGZO is a widely used metal-oxide because of its amorphous structure and relatively high mobility. [23] Therefore, many attempts are carried out to improve TFT performance by using multi-component metal-oxides.

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confidence: 99%

“…[25] The ionic radius and metal-oxygen bonding strength are the most critical parameters to improve the mobility and stability of metal oxide TFTs. The solution-processed alloyed form of the oxide TFTs fabricated using In-Ga-O, [26] indium-zinc oxide (In-Zn-O), [28] indiumzinc-tin oxide (In-Zn-Sn-O), [29] aluminum-doped indium zinc tin oxide (Al-In-Zn-Sn-O), [30] zinc tin oxide (Zn-Sn-O), [31] and indium gallium zinc oxide (In-Ga-Zn-O) [32] as an active channel material have been widely studied for the high performance of the solution based oxide TFTs. Ga can be a good choice due to its lower ionic radius (62 pm) and relatively strong bonding strength with oxygen (353.5 kJ mol −1 ).…”

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Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Mude

Bukke

Saha

et al. 2019

Adv Elect Materials

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their high optical transparency and high mobility. The undoped InO x and ZnO have a crystalline structure with high carrier concentration. [23] Therefore, many attempts are carried out to improve TFT performance by using multi-component metal-oxides. [24][25][26][27][28][29][30][31][32] IGZO is a widely used metal-oxide because of its amorphous structure and relatively high mobility. [8,32] The mixing of two or more cations with different sizes and ionic charges is tried for amorphous phase with suppressing crystallization and carrier concentration. [24] The incorporation of an appropriate quantity of cations is required to form the substitutional doping and strong chemical bonding with oxygen ions for stable oxide TFTs. [25] The ionic radius and metal-oxygen bonding strength are the most critical parameters to improve the mobility and stability of metal oxide TFTs. To enhance the bias stability of oxide TFT, carrier suppressors such as Ga 3+ , Gd 3+ , La 3+ , Sc 3+ , and Y 3+ can be used. Ga can be a good choice due to its lower ionic radius (62 pm) and relatively strong bonding strength with oxygen (353.5 kJ mol −1 ). [33] The selection of an appropriate percentage of carrier suppressor is a vital parameter to control the carrier concentration. But, excess doping can modify the material structure, which leads to deteriorating device performance. Ga is used for IGZO, indium-gallium oxide (IGO), [26] and indium-gallium-zinc-tin oxide (IGZTO), [27] so that we selected Ga doping in IZTO to improve mobility and stability. The solution-processed alloyed form of the oxide TFTs fabricated using In-Ga-O, [26] indium-zinc oxide (In-Zn-O), [28] indiumzinc-tin oxide (In-Zn-Sn-O), [29] aluminum-doped indium zinc tin oxide (Al-In-Zn-Sn-O), [30] zinc tin oxide (Zn-Sn-O), [31] and indium gallium zinc oxide (In-Ga-Zn-O) [32] as an active channel material have been widely studied for the high performance of the solution based oxide TFTs. To increase mobility, various treatments were carried out such as heat-treatment [34] and plasma-treatment. [35][36][37] In this study, we report the Ar/O2 plasma treatment effect on the performance of Ga-doped IZTO TFT. First, we improve the performance of the a-IZTO TFT by varying the Ga doping ratio from 0 to 20%. It is found that 10% Ga-doped IZTO shows the best performance. To further improve the TFT performance, the Ar/O 2 plasma treatment was carried out. The carbon concentration at the surface of Ga-doped IZTO could be reduced by Ar/O 2 plasma treatment, which is confirmed from the XPS The effects of gallium doping into indium-zinc-tin oxide (IZTO) thin film transistors (TFTs) and Ar/O 2 plasma treatment on the performance of a-IZTO TFT are reported. The Ga doping ratio is varied from 0 to 20%, and it is found that 10% gallium doping in a-IZTO TFT results in a saturation mobility (µs at ) of 11.80 cm 2 V −1 s −1 , a threshold voltage (V th ) of 0.17 V, subthreshold swing (SS) of 94 mV dec −1 , and on/off current ratio (I on /I off ) of 1.21 × 10 7 . Additionally, the performance of 10% G...

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Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

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confidence: 99%

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Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Mude

Bukke

Saha

et al. 2019

Adv Elect Materials

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Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

et al. 2018

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The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed.

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Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

et al. 2021

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over 80% in the visible light range. [2] ITO is widely used as essential transparent conducting electrodes in flat panel displays, touch screens, and solar cells. The global ITO market has an annual growth rate of 15% and is valued at 7 billion USD in 2019. In 2004, Nomura and Hosono et al. made great breakthrough in oxide thin film transistor (TFT) based on amorphous indium gallium zinc oxide (IGZO) grown at room temperature. [3] The amorphous IGZO showed an impressive mobility of 9 cm 2 V −1 s −1 , about 10 times of amorphous hydrogenated Si TFT which was used exclusively for displays at that time. Soon after Hosono's seminal work, IGZO TFT was commercialized by Sharp Corporation in 2012, and then rapidly expanded to mobile phones, tablets and laptops. [4] In 2019, the fifth generation IGZO TFT went to mass production, capable of driving large-area displays (85 in.) with ultrahigh 8 K resolution. [5] Moreover, oxide TFTs are also considered as the most promising transistors for next-generation curved, flexible, or even rollable electronics. [6] The great success of oxide semiconductors is underpinned by their unique electronic structure, amenability for n-type doping, as well as intrinsic stability. Oxide semiconductors have bandgap larger than 3 eV, enabling transparency in the visible spectrum. The conduction band (CB) of oxide semiconductors is typically composed of empty ns-orbitals (n ≥ 4) of heavy posttransition metals. The large, spherical ns-orbitals give rise to a high electron mobility even in amorphous phases, as well as high dopability for hosting a high density of electrons. Therefore, oxide semiconductors are amendable via doping to be a transparent semiconductor or a transparent conductor, depending on the purposes of device applications, e.g., TFT or ITO. However, there are two sides to every coin. The nature of electronic structure of oxide semiconductors also leads to the fundamental limitation of achieving p-type oxide semiconductors, which is exacerbated by the presence of a high background electron density arising from the formation of unintentional defects and impurities. [1a,7] The lack of p-type semiconductor significantly limits the great potential of oxide electronics. [7b] A high electron density and defect states cause detrimental effects on oxide TFT device performance, such as a high off-current, lower mobility, and instability issues. [8] In the past two decades, considerable research efforts have been made to understand the microscopic origin of defect states and background electrons Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new...

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Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrO_xGate Insulator

Cited by 43 publications

References 19 publications

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

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Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator

Cited by 43 publications

References 19 publications

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O2 Plasma Treatment

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

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Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrO_xGate Insulator

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O₂ Plasma Treatment