Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

“…Detectors for broadband optical signals consist of two main classes. One is narrow band gap semiconductors (such as germanium, , group III–V/II–VI compounds, , other narrow band gap two-dimensional materials, and colloidal quantum dots with tunable band gaps , ) and the other is all-silicon detectors which utilize two-photon absorption, , sub-band gap absorption, , surface-state absorption, , and optically assisted carrier tunneling absorption physical effects of silicon to achieve light absorption below the energy gap. Considering requirements such as room-temperature operation, nontoxicity, and low cost, all-silicon detectors offer unparalleled advantages over these narrow band gap semiconductor detectors.…”