Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment

Li, Mingxue; Luo, Wenjun; Liu, Bin; Zhao, Xin; Li, Zhaosheng; Chen, Dunjun; Yu, Tao; Xie, Zili; Zhang, Rong; Zou, Zhigang

doi:10.1063/1.3640223

Cited by 25 publications

(35 citation statements)

References 17 publications

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“…Recently, we also found that surface pretreatment had similar effects on the Mo-doped BiVO 4 and InGaN photoanodes. [31,32] Therefore, the removal of surface recombination centers can be a universal strategy to improve the photoelectrochemical performance of a photoelectrode.…”

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confidence: 99%

A Co‐catalyst‐Loaded Ta₃N₅ Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer

et al. 2013

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A Co‐catalyst‐Loaded Ta₃N₅ Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer

et al. 2013

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“…Unfortunately, so far, there are not so many reports on nitride related materials for solar hydrogen production. [2][3][4][5][6][7][8][9] The major challenge is due to low water-splitting efficiency. Very recently, we have demonstrated a significant enhancement in solar hydrogen generation efficiency in hydrochloric acid (HCl) electrolyte (pH ¼ 0.1) using our InGaN/GaN nanorod array structures, fabricated by means of a selforganised nickel nano-mask fabrication technique.…”

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Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation

Benton

Bai

Wang

2013

Applied Physics Letters

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A significant reduction in photo-electrochemical etching effects has been achieved on an InGaN/GaN nanorod array structure used as a photoelectrode in NaOH electrolyte by means of depositing transparent nickel oxide nano-particles on the nanorod array structure. Alongside this, the addition of the nickel oxide nano-particles has also led to an increase in photocurrent, thus, enhancing energy conversion efficiency. The enhanced performance is attributed to the discontinuities in both conduction band and valence band formed between the nickel oxide and the GaN, which promote the photo-generated electrons to move to a counter electrode and also lead to an enhanced diffusion of the photo-generated holes from the GaN into the NiO. This effect reduces the recombination of the electrons and the holes due to an increased separation between them and also significantly decreases the photo-electrochemical etching as a result of a sizeable reduction in the number of the photo-generated holes accumulated at the GaN/electrolyte interface.

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“…The etching removes surface recombination centres and thus decreases the fraction of recombining electron‐hole pairs. This leads to a more efficient separation of the electrons and holes and an increased photocurrent density .…”

Section: Resultsmentioning

confidence: 99%

“…However, the choice of the electrolyte is also very important since the conductivity of pure water is too low for an efficient PEC. In previous reports, a multitude of different electrolytes with different concentrations was used to minimize the resistivity in the cell and to enhance the photoelectrochemical reaction .…”

Section: Introductionmentioning

confidence: 99%

Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

Finken

Wille

Reuters

et al. 2014

Physica Status Solidi (b)

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InGaN is a promising material for direct solar water splitting due to its tuneable bandgap between 0.69 and 3.4 eV. Several investigations were carried out recently to test the suitability of InGaN in photoelectrochemical cells (PECs). These studies were performed in a multitude of different electrolytes and hence a comparison of the results is very difficult. Therefore, the electrochemical stability of InGaN was investigated and compared in different commonly used electrolytes in this work. The InGaN layers were deposited via metal-organic vapour phase epitaxy (MOVPE). Their structural properties were examined by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The long-term stability of the InGaN layers was studied in NaCl, HCl, HBr, H 2 SO 4 , NaOH and KOH. Etching was observed for the two bases after 48 h. Furthermore, the photoanodes were investigated via chronoamperometry. For these measurements, the samples were illuminated with a 55 W Xe lamp for 45 min and additionally biased with 0.5 V. A comparison of the different electrolytes reveals that only the samples in NaOH and HBr show a sufficient photocurrent. Additionally, stable InGaN surfaces were observed only in 1 mol/L NaCl and in 1 mol/L HBr. Since the use of HBr most likely leads to the formation of Br 2 instead of O 2 , it is concluded that n-doped InGaN has to be used with co-catalysts in PECs to prevent the etching of the surface.

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Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment

Abstract: Articles you may be interested inSignificantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation

Cited by 25 publications

References 17 publications

A Co‐catalyst‐Loaded Ta₃N₅ Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer

A Co‐catalyst‐Loaded Ta₃N₅ Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer

Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation

Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

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Remarkable enhancement in photocurrent of In0.20Ga0.80N photoanode by using an electrochemical surface treatment

Abstract: Articles you may be interested inSignificantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation

Cited by 25 publications

References 17 publications

A Co‐catalyst‐Loaded Ta3N5 Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer

A Co‐catalyst‐Loaded Ta3N5 Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer

Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation

Investigations of the electrochemical stability of InGaN photoanodes in different electrolytes

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A Co‐catalyst‐Loaded Ta₃N₅ Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer

A Co‐catalyst‐Loaded Ta₃N₅ Photoanode with a High Solar Photocurrent for Water Splitting upon Facile Removal of the Surface Layer