Reliable threshold voltage determination for sub-0.1 μm gate length MOSFETs

We report a new quantum effect in metal-oxide-semiconductor field-effect transistor (MOSFET), namely that the twodimensional (2-D) inversion charge falls substantially short of the classically predicted linear increase with gate voltage (V G ) in strong inversion. This effect is to be effectively quantified via the threshold voltage (V TH ) increasing with V G in the classical current-voltage (I-V) model and is called herein the threshold voltage creep (VTH-creep). In 0.18 m MOSFET, for example, VTH-creep amounts to 58% of the V TH at the device turn-on point, when V G is swept from 0.5 to 2 V. Additionally, the VTHcreep significantly affects the extraction of effective mobility ( eff ) from the I-V data. VTH-creep is shown a key to the accurate I-V modeling and constitutes one of the most clearly observed quantum phenomena in MOSFET.

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Reliable threshold voltage determination for sub-0.1 μm gate length MOSFETs

Cited by 3 publications

References 12 publications

A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region

A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region

Investigation of Trap-Induced Performance Degradation and Restriction on Higher Ferroelectric Thickness in Negative Capacitance FDSOI FET

A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor: Threshold Voltage Creep with Gate Voltage

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