Reliable measurement of Seebeck coefficient in semiconductors

Werheit, H.; Kuhlmann, U.; Herstell, Bernhard; Winkelbauer, Walter

doi:10.1088/1742-6596/176/1/012037

Cited by 17 publications

(18 citation statements)

References 2 publications

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“…This avoids any unwanted voltage offset effects [59]. We expect the Seebeck coefficient to be independent of temperature as this is typical for small polaron behavior [41] and has been previously seen in undoped Cr 2 O 3 [30].…”

Section: Sph In Cr 2 Omentioning

confidence: 78%

Conducting mechanism in the epitaxialp-type transparent conducting oxideCr2O3:Mg

et al. 2015

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Epitaxial p-type transparent conducting oxide (TCO) Cr 2 O 3 :Mg was grown by electron-beam evaporation in a molecular beam epitaxy system on c-plane sapphire. The influence of Mg dopants and the oxygen partial pressure were investigated by thermoelectric and electrical measurements. The conduction mechanism is analyzed using the small-polaron hopping model, and hopping activation energies have been determined, which vary with doping concentration in the range of 210-300 ± 5 meV. Films with better conductivity were obtained by postannealing. The effect of postannealing is discussed in terms of a crystallographic reordering of the Mg dopant. The highest Seebeck mobilities obtained from thermoelectric measurements are of the order of 10 −4 cm 2 V −1 s −1 . We investigate the fundamental properties of a Mg dopant in a high crystalline quality epitaxial film of a binary oxide, helping us understand the role of short range crystallographic order in a p-type TCO in detail.

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Section: Sph In Cr 2 Omentioning

confidence: 78%

Conducting mechanism in the epitaxialp-type transparent conducting oxideCr2O3:Mg

et al. 2015

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“…Measurement of Seebeck coefficient is easy to overestimate because precise measurement of temperature gradients and thermoelectric voltages are required. These mistakes arise from the low electrical conductivity of organic materials and the regular use of small‐scale devices, that is, thin films and narrow channel lengths 61–63. The thermoelectric properties were measured with a home‐made setup taking these issues into account.…”

Section: Methodsmentioning

confidence: 99%

Interplay Among Thermoelectric Properties, Atmospheric Stability, and Electronic Structures in Solution‐Deposited Thin Films of P(Na_X[Niett])

Hwang

Potscavage

Kim

et al. 2020

Adv Elect Materials

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Recent progress in organic thermoelectric generators has resulted in high performance through chemical control of the redox levels of organic semiconductors, but the scarcity of good candidates for soluble organic n‐type materials limits the use of π‐leg structures consisting of complementary elements of p‐ and n‐type materials because of unbalanced transport coefficients that lead to power losses. A sol–gel technique with oxidation is demonstrated to be effective for the fabrication of smooth films of poly(nickel 1,1,2,2‐ethenetetrathiolate), P(MX[Niett]), which is known as an insoluble material. By controlling the annealing temperature, a maximum n‐type power factor of 10.1 μW m−1 K−2 at 100 °C (Seebeck coefficient of −35.4 μV K−1 and electrical conductivity of 80.3 S cm−1) is demonstrated. Chemical and electronic structures of P(MX[Niett]) thin films are explored based on changes in optical absorption, ultraviolet, and X‐ray photoelectron spectroscopies to understand the origin of the high atmospheric stability. Analysis indicates that the stability arises from electronic states of the doped state that satisfy a balance with the redox potential of the air components and that stability under repeated redox reactions is an important factor for obtaining the n‐type organic thermoelectric materials that are highly stable in air.

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“…While this setup does not account for a contact potential between the probes and semiconductor, 28 it is adequate for measuring relative changes.…”

Section: Electrical Measurementsmentioning

confidence: 99%

Reversibility of (Ag,Cu)(In,Ga)Se2 electrical properties with the addition and removal of Na: Role of grain boundaries

Forest

Eser

McCandless

et al. 2015

Journal of Applied Physics

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The Na content of (Ag,Cu)(In,Ga)Se2 films was cyclically adjusted using a novel method involving cycles of water rinsing at 60 °C followed by heating in air at 200 °C to remove Na and evaporation of NaF to re-introduce Na back into the film. The low temperatures and short heating times ensure that Na is removed only from grain boundaries while leaving grain interiors unaffected. Cross-grain conductivity and Seebeck coefficient were measured during this removal procedure and both measurements decreased when Na was removed and both recovered upon the re-addition of Na, consistent with an increase in compensating donor defects in the absence of Na. These results demonstrate that Na reversibly affects the electrical properties of grain boundaries. We propose that Na reversibly passivates donor-like defects such as InCu double donors at grain boundaries.

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Reliable measurement of Seebeck coefficient in semiconductors

Cited by 17 publications

References 2 publications

Conducting mechanism in the epitaxialp-type transparent conducting oxideCr2O3:Mg

Conducting mechanism in the epitaxialp-type transparent conducting oxideCr2O3:Mg

Interplay Among Thermoelectric Properties, Atmospheric Stability, and Electronic Structures in Solution‐Deposited Thin Films of P(Na_X[Niett])

Reversibility of (Ag,Cu)(In,Ga)Se2 electrical properties with the addition and removal of Na: Role of grain boundaries

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Reliable measurement of Seebeck coefficient in semiconductors

Cited by 17 publications

References 2 publications

Conducting mechanism in the epitaxialp-type transparent conducting oxideCr2O3:Mg

Conducting mechanism in the epitaxialp-type transparent conducting oxideCr2O3:Mg

Interplay Among Thermoelectric Properties, Atmospheric Stability, and Electronic Structures in Solution‐Deposited Thin Films of P(NaX[Niett])

Reversibility of (Ag,Cu)(In,Ga)Se2 electrical properties with the addition and removal of Na: Role of grain boundaries

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Interplay Among Thermoelectric Properties, Atmospheric Stability, and Electronic Structures in Solution‐Deposited Thin Films of P(Na_X[Niett])