Reliable high-power 1060 nm DBR lasers for second-harmonic generation

Nguyen, Hong Ky; Coleman, Sean; Visovsky, Nick; Li, Y.; Song, Kechang; Davis, Ronald W.; Jun, Jun; Hu, M.H.; Zah, Chung−En

doi:10.1049/el:20070694

Cited by 26 publications

(22 citation statements)

References 6 publications

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“…A continuous wave (cw) state of the system (1)-(3) is defined by an optical mode [Θ(β(n), z), Ω(β(n))] with a real eigenvalue Ω. Here, the carrier distributionn(z) fulfills the stationary carrier rate equation (2).…”

Section: Mode Analysismentioning

confidence: 99%

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Mode transitions in distributed Bragg reflector semiconductor lasers: experiments, simulations and analysis

Radziunas¹,

Hasler²,

Sumpf³

et al. 2011

J. Phys. B: At. Mol. Opt. Phys.

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Abstract. The performance of a multisection DBR semiconductor laser emitting around 1.06 µm is experimentally and theoretically investigated. A thermal-induced change of the refractive index implied by an increase of the injection current yields nearly-periodic transitions between neighboring cavity modes. These transitions are explained by means of a modal analysis and and by numerical simulations based on the traveling wave model.

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Section: Mode Analysismentioning

confidence: 99%

“…The balance of the carrier rate equation (2) in this section is kept by increasing the gain (decreasing the loss) function g(n) < 0, i.e., by increasing the carrier density, which for high injection levels slowly approaches the transparency density n tr (see Fig. 7a).…”

Section: Simulationsmentioning

confidence: 99%

Mode transitions in distributed Bragg reflector semiconductor lasers: experiments, simulations and analysis

Radziunas¹,

Hasler²,

Sumpf³

et al. 2011

J. Phys. B: At. Mol. Opt. Phys.

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show abstract

“…Although the phase in DBR lasers can be controlled, these devices tend to show mode hoping that results in nonlinearities in the light-current characteristics. High output powers of up to 700 mW from single emitter chips and high reliability close to 10,000 hours could be demonstrated [95,96]. A distributed feedback (DFB) diode laser is depicted in Fig.…”

Section: Diode Lasers With Integrated Bragg Reflectorsmentioning

confidence: 99%

Blue‐green light generation using high brilliance edge emitting diode lasers

Jechow¹,

Menzel

Paschke

et al. 2010

Laser & Photonics Reviews

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A review about second harmonic generation using edge emitting diode lasers and nonlinear crystals to obtain laser radiation in the blue-green spectral range is presented. Therefore, pump laser radiation with high brightness and narrow bandwidth is necessary. Thus, this review gives an overview of the advances made with distributed feedback and Bragg reflector lasers, tapered lasers and amplifiers as well as external cavity diode lasers and master oscillator power amplifier schemes to achieve high brilliance emission. Since periodically poled materials have enabled high second harmonic conversion efficiencies with low and moderate pump powers, the review is focused on frequency doubling using those materials. The most commonly used materials, their properties and limitations are discussed briefly. Single pass and resonant SHG setups with waveguide and bulk nonlinear crystals are discussed and an emphasis on building compact and integrated devices is made. PPLN waveguide crystal pumped by a DFB laser (above). Integrated SHG device on a CCP heatsink (below).

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“…In particular, semiconductor laser diodes emitting at 1064 nm is important in laser display system to generate green beam by pumping the frequency conversion PPLN crystals [1,2,3]. These applications require lasers who can provide relatively high power to obtain high power conversion efficiency and high green light generation power [4].…”

Section: Introductionmentioning

confidence: 99%

High power 1060-nm super large vertical cavity semiconductor lasers

et al. 2014

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High power single-mode ridge waveguide 1060-nm semiconductor lasers are reported. The lasers consist of compressively strained double InGaAs/GaAs quantum wells and a GaAs/AlGaAs separate confinement vertical structure. A super large vertical optical cavity is employed to have a low internal loss, large optical spot size and low vertical optical divergence angle. The material composition and thickness of waveguide layers and claddings layer are optimized systematically. The active layer is detuned from center of the waveguide and thickness of cladding layers is optimized to guaranty single mode lasing of the large optical cavity. The large vertical cavity laser structure with thickness of 4 μm allows the lasers have a low internal loss of less than 0.6 /cm, a large optical spot size about 1μm and a vertical divergence angle about 20 degree. For lateral optical confinement, a double trench ridge waveguide is employed to maintain single-lateral-mode operation. Based on the optimization, 1.5 W continue wave optical power is achieved for broad area lasers with 1mm longitude cavity length. Narrow stripe ridge waveguide lasers of 1mm cavity length with single mode current and optical power of 700 mA and 340 mW is obtained. Suggestions for further improvements in terms of single mode power and applications of the high power semiconductors are discussed.

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Reliable high-power 1060 nm DBR lasers for second-harmonic generation

Cited by 26 publications

References 6 publications

Mode transitions in distributed Bragg reflector semiconductor lasers: experiments, simulations and analysis

Mode transitions in distributed Bragg reflector semiconductor lasers: experiments, simulations and analysis

Blue‐green light generation using high brilliance edge emitting diode lasers

High power 1060-nm super large vertical cavity semiconductor lasers

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