Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFETs

Lai, Hang–Chin; Zous, N.K.; Tsai, Wen-Jer; Lu, Tsung-Chien; Wang, Tahui; King, Y.C.; Pan, S.C.

doi:10.1109/icmts.2003.1197421

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…In [2], it was shown that a large increase in accuracy can be obtained by correcting for the gate leakage component, as obtained from very low-frequency CP data. Furthermore, the leakage current component can be minimized by carefully choosing the gate voltage window [4]. In [3], a small voltage swing approach was proposed that minimizes the leakage current component even further.…”

Section: T He Charge-pumping (Cp) Techniquementioning

confidence: 99%

Application and Evaluation of the RF Charge-Pumping Technique

Sasse

Schmitz

2008

IEEE Trans. Electron Devices

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Abstract-In this paper, we will discuss the extendibility of the charge-pumping (CP) technique toward frequencies up to 4 GHz. Such high frequencies are attractive when a significant gate leakage current flows, obscuring the CP current at lower pumping frequencies. It is shown that using RF gate excitation, accurate CP curves can be obtained on MOS devices with a leakage current density exceeding 1 A·cm −2 . A theoretical analysis of the trap response to RF gate voltage signals is presented, giving a clear insight on the benefits and limitations of the technique.

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Section: T He Charge-pumping (Cp) Techniquementioning

confidence: 99%

Application and Evaluation of the RF Charge-Pumping Technique

Sasse

Schmitz

2008

IEEE Trans. Electron Devices

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“…In [98] it was shown that a large increase in accuracy can be obtained by correcting for the gate leakage component, as obtained from very low frequency CP data. Furthermore, the leakage current component can be minimized by carefully choosing the gate voltage window [105]. In [99] a small voltage swing approach was proposed that minimizes the leakage current component even further.…”

Section: Introductionmentioning

confidence: 99%

Reliability engineering in RF CMOS

Sasse¹

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On-chip charge pumping method for characterization of interface states of ultra thin gate oxide in nano cmos technology

Kim

Han

et al.

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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For the first time, on-chip charge pumping method is proposed to characterize ultra thin gate oxide for nano-scale CMOSFETs. Designed on-chip charge pumping system can supply 30~500MHz square-type pulse waves to DUT transistor and measured charge pumping current showed no gate tunneling current dependency which can be easily monitored in very thin gate oxide. In addition to the measurement of interface states by fixed-amplitude method, the distribution of interface states in channel region can be easily extracted by fixed-base method using this system. The proposed method is also successfully applied to analyze hot-carrier stress-induced threshold voltage (V t )-degradation and to evaluate plasma process induced damage in terms of interface trap density.

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Reliable extraction of interface states from charge pumping method in ultra-thin gate oxide MOSFETs

Cited by 7 publications

References 5 publications

Application and Evaluation of the RF Charge-Pumping Technique

Application and Evaluation of the RF Charge-Pumping Technique

Reliability engineering in RF CMOS

On-chip charge pumping method for characterization of interface states of ultra thin gate oxide in nano cmos technology

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