Reliable and Low-Power Multilevel Resistive Switching in TiO2 Nanorod Arrays Structured with a TiOx Seed Layer

Xiao, Ming; Musselman, Kevin P.; Duley, W. W.; Zhou, Yunhong

doi:10.1021/acsami.6b14206

Cited by 99 publications

(66 citation statements)

References 63 publications

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“…These devices, that also exhibited self-rectifying properties, exhibited bipolar resistive switching with an endurance of beyond 60 cycles, an HRS/LRS ratio of about 70 and a retention up to 10 4 s. The switching mechanism is in this case comparable to the previously discussed mechanism in single TiO 2 NWs [161] and NW arrays. [269][270][271][272] Similarly, resistive switching behavior was observed by Prakash et al [284] in core-shell Ge/GeO x nanowires and by Li et al [285] in ITO nanowire networks. A SEM picture of an ITO NW interwoven network grown by using a self-assembled template of polystyrene spheres is [270] Copyright 2017, the authors, published by Springer Nature.…”

Section: Stacked Devicesmentioning

confidence: 83%

“…The performances of TiO 2 NR array-based devices can be further improved by introducing a TiO x seed layer on the FTO substrate before the hydrothermal growth of NRs, as reported by Xiao et al [271] that realized Al/TiO 2 /TiO x /FTO formingfree devices that exhibited high stability with an endurance of over 500 cycles and a retention of 3 × 10 4 s. Authors claimed that the insertion of this layer allows the growth of vertically aligned and uniform TiO 2 NRs that improved the stability of devices. In addition, NRs grow with a lower concentration of oxygen vacancies with a consequent reduction of programming currents, power consumption, and enabling multilevel memory performances.…”

Section: Wwwadvelectronicmatdementioning

confidence: 98%

“…Resistive switching was observed also in case of hydrothermally grown arrays of TiO 2 NRs in both rutile [269][270][271] and anatase [272] phases. Considering anatase TiO 2 NR arrays, bipolar resistive switching was observed by Senthilkumar et al [272] considering Ti/TiO 2 NR/FTO devices that exhibited an endurance of 10 5 cycles and a retention of 5 × 10 3 s. The proposed switching mechanism in this case can be explained by taking into account the Ti/TiO 2 interface.…”

Section: Wwwadvelectronicmatdementioning

confidence: 98%

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Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano

Porro

Valov

et al. 2019

Adv Elect Materials

109

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Memristive devices are considered one of the most promising candidates to overcome technological limitations for realizing next‐generation memories, logic applications, and neuromorphic systems in the modern nanoelectronics and information technology. Despite the continuous efforts, understanding the resistive switching mechanism underlying memristive/neuromorphic behavior still represents a challenge. Metal oxide nanowire‐based memristors appear suitable model systems for a deeper understanding of the involved physical/chemical phenomena due the possibility for localizing and investigating the switching mechanism. In practical aspects, nanowire‐based devices can be grown using a bottom‐up approach, thus being considered reliable candidates for going beyond the current scaling limitations of the top‐down approach by the standard lithography. In addition, taking into advantage of the high surface‐to‐volume ratio of these nanostructures, new device functionalities can be achieved by exploiting surface effects. In the literature, a variety of nanowire‐based devices such as single nanowires, nanowire arrays, and networks are reported to exhibit memristive behavior, explained by different switching mechanisms. This work provides a comparative review and a comprehensive analysis of device performances and physical phenomena responsible for memristive and neuromorphic behavior in such nanostructures. The analysis of the state‐of‐art of memristor devices based on nanowires and nanorods represent a milestone toward the development of nanowire‐based artificial neural networks.

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Section: Stacked Devicesmentioning

confidence: 83%

Section: Wwwadvelectronicmatdementioning

confidence: 98%

Section: Wwwadvelectronicmatdementioning

confidence: 98%

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Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Milano

Porro

Valov

et al. 2019

Adv Elect Materials

109

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“…[40][41][42][43] Hence, the memory devices switch from HRS to LRS, which is called as the "SET" process. The linear Ohmic behavior (I ≈ V) (red line) is fitted in the low voltage region ranging from 0 to 0.4 V. The conduction in this region is dominated by thermally generated free electrons trapped in the CsPbBr 3 film.…”

Section: Resultsmentioning

confidence: 99%

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Zhu

Cheng

Shi

et al. 2019

Adv Elect Materials

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density, fast switching speed, multibit storage potential, and nonvolatile nature, is considered as one of the most promising candidate in nonvolatile memory field. [1][2][3] The RRAM device, with sandwich structure of top metal (TE)/ switching layer/bottom metal (BE), can be switched between a low resistance state (LRS) and high resistance state (HRS) under the stimulation of different voltage amplitudes or polarities. [4] Stable resistive switching (RS) behavior has been observed in various perovskite oxide materials based memory devices, for instances, SrTiO 3 , [5] BaTiO 3 , [6] and BiFeO 3 , [7] etc. However, the perovskite oxide-based RRAM devices are limited by several disadvantages, such as high processing temperature and rigid ceramic property of the switching layer. [8] In recent years, halide perovskites, with formula of ABX 3 (A = CH 3 NH 3+ , CH(NH 2 ) 2+ , Cs + ; B = Pb 2+ , Sn 2+ ; X = Cl − , Br − , I − ), have attracted intensive attention due to their huge potential applications in industrial applications, such as solar cells, [9] photodetectors, [10] light emitting diodes, [11] lasers, [12] and RS memory devices. [13] Many attempts have been focused on this material because of its outstanding properties, for instance, the low exciton binding energy, long-range charge diffusion length, high carrier mobility, high absorption coefficient, and suitable bandgaps. [14][15][16][17] To date, most studies have focused on the organicinorganic hybrid halide perovskites. [16,17] However, despite the demonstrated remarkable performances of the organicinorganic halide perovskites based devices, their industrial applications are limited to the instability, including the poor thermal stability and moisture sensitivity, which is due to the instability nature of the organic cations. [18] Therefore, to obtain air-stable halide perovskites, replacing instable organic cations by stable cations is of great importance. To address this issue, the organic cation is substituted by cesium (Cs) and the ascalled all-inorganic cesium lead halide perovskite (CsPbX 3 ) has attracted a great deal of attention in RS memory field. [19][20][21] All-inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic-inorganic hybrid halide perovskites. RS memory devices utilizing air-stable all-inorganic halide perovskite cesium lead bromide (CsPbBr 3 ) film as the switching layer, which are successfully prepared by spin coating at low temperature, are demonstrated. Memory devices based on CsPbBr 3 film exhibit typical reproducible bipolar RS behavior and superior switching characteristics, including the high ON/OFF ratio (≈10 4 ), long data retention (>5 × 10 4 s), and environmental stability. In addition, multilevel storage capability can be achieved through controlling the different compliance currents. The formation and rupture of bromine (Br) vacancy conducting filaments (CFs) is proposed to explain the switching b...

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“…It is widely accepted that the formation and rupture of conductive filaments (CFs) accounts for the physical mechanism of resistive switching (RS) . Thus, the location, diameter, and geometrical morphology of CFs could have a strong impact on RS parameters, even on memory devices performance . However, the specific features of CFs are uncontrollable, because the migration of metal (electrochemical metallization mechanism, ECM) or oxygen (valence change mechanism, VCM) ions is highly random in the condition of uniform electric‐field .…”

mentioning

confidence: 99%

Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory

Ding

Tao

et al. 2018

Physica Rapid Research Ltrs

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Uniform graphite microislands (GMs) are prepared through catalytic graphitization of amorphous carbon (a-C) thin film. Taking advantage of the specific structural feature of the GMs, we demonstrate an effective approach to improve the reliability of amorphous carbon based resistive random access memory devices. Through investigating the temperature dependence of the high/low resistance states (HRS/LRS), it is verified that the conductive filaments (CFs) prefer to grow along the GMs. The enhancement of localelectric-field around the GMs can not only induce a lower forming/set voltage to largely avoid CFs overgrowth, but also simplify the CFs morphology. As a result, the relative fluctuation of HRS/LRS resistance reduces from 82.8%/ 46.3% to 27.4%/18.8%, respectively. In addition, the memory devices with GMs structure exhibit a low cycling degradation and good retention (>10 4 s at 85 C).Resistive random access memory (RRAM) devices possess various superior performance including fast programming speed, low power consumption and high density, which makes it a promising candidate for next-generation non-volatile memory and neuromorphic computing. [1][2][3][4] A great many materials have been explored as switching media for RRAMs over the past decades, such as oxides, [5] nitrides, [6] chalcogenides, [7] organics, [8] and others. [9,10] It is widely accepted that the formation and rupture of conductive filaments (CFs) accounts for the physical mechanism of resistive switching (RS). [11][12][13] Thus, the location, diameter, and geometrical morphology of CFs could have a strong impact on RS parameters, even on memory devices performance. [14][15][16] However, the specific features of CFs are uncontrollable, because the migration of metal (electrochemical metallization mechanism, ECM) or oxygen (valence change mechanism, VCM) ions is highly random in the condition of uniform electric-field. [17,18] This would result in a large fluctuation of RS parameters, such as high/low resistance state (HRS/LRS) and switching voltages (V set /V reset ), which is a main obstacle for practical applications. [19][20][21] Therefore, controlling CFs is the core topic for improving the performance of RRAM devices.Based on the current understanding on the working mechanism of RRAM, the redox process during the formation and rupture process of CFs is closely dependent on the electric field. [22] While, the electric-field is uniform near the planar electrode/insulating layer interface, leading to the equal opportunity of ions migration, which is the physical reason of the CFs uncontrollability. Thus, electric-field localization has been proposed as an effective method for controlling CFs. Many attempts have been made to enhance the local electric field (LEF), such as inserting metal nanodots, [23] introducing nanoinsulators, [24] or using tip electrode. [13,25] These approaches effectively controlled the conductive filament growth, obtaining better RS performance. However, it is still necessary to apply multiple function materials develop mo...

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Reliable and Low-Power Multilevel Resistive Switching in TiO₂ Nanorod Arrays Structured with a TiO_x Seed Layer

Cited by 99 publications

References 63 publications

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory

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Reliable and Low-Power Multilevel Resistive Switching in TiO2 Nanorod Arrays Structured with a TiOx Seed Layer

Cited by 99 publications

References 63 publications

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory

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Reliable and Low-Power Multilevel Resistive Switching in TiO₂ Nanorod Arrays Structured with a TiO_x Seed Layer

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device