1997
DOI: 10.1080/10584589708015697
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Reliability study on bst capacitors for gaas mmic

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Cited by 17 publications
(7 citation statements)
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“…6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K). 6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K).…”
Section: Resultssupporting
confidence: 87%
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“…6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K). 6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K).…”
Section: Resultssupporting
confidence: 87%
“…A quantitative analysis of the data reveals several parameters: first, the bandgap energy E G , which is calculated from the Arrhenius plot of the conductivity values in the intrinsic minimum ( Fig. 6), yielding a value of E G ðTÞ ¼ ð3:30 AE 0:17ÞeV À ð5 AE 1Þ Â 10 À4 eV T=K (10) agreeing very well with the result by Moos (E G (T) 5 3.25 eV-5.85 Â 10 À4 eV Á T/K). 21 Second, the thermal activation of oxygen vacancy diffusion E A,Vö ,…”
Section: Resultsmentioning
confidence: 99%
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“…1 For other applications, the benefit of thin-film capacitor technology may be based on the ability either to provide integrated capacitor networks and RCL circuits or to integrate them into the packaging architecture, rather than direct integration with the integrated circuit (IC). For these applications, the main motivation for developing a thin-film technology is that it can lead to a higher level of integration than can be achieved with discrete components.…”
Section: Introductionmentioning
confidence: 99%