Reliability Research of GaN-Based blue Semiconductor Lasers

Zhang, Chengwei; Liao, Wenjing; Yang, Shuai; Wang, Hongran; Wei, Zhipeng; Guoguang, Lu

doi:10.1109/srse54209.2021.00018

Cited by 4 publications

(1 citation statement)

References 20 publications

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“…Gallium nitride (GaN), as a Group III nitride semiconductor material, has been widely used for optoelectronic device applications, such as light emitting diodes [ 1 , 2 , 3 ], high electron mobility transistors [ 4 , 5 ], semiconductor lasers [ 6 , 7 ], solar cells [ 8 , 9 ], and ultraviolet detectors [ 10 , 11 ], due to its advantages of wide direct band gap, high carrier concentration, high breakdown field strength, and excellent chemical durability [ 12 ]. GaN thin films can be grown using pulsed laser deposition [ 13 , 14 ], magnetron sputter epitaxy [ 15 , 16 ], molecular beam epitaxy [ 17 , 18 ], metal-organic chemical vapor deposition [ 19 , 20 ], and atomic layer deposition (ALD) [ 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

et al. 2022

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Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH3 plasma. The effect of substrate temperature on growth mechanism and properties of the PEALD GaN films is systematically studied. The experimental results show that the self-limiting surface chemical reactions occur in the substrate temperature range of 250–350 °C. The substrate temperature strongly affects the crystalline structure, which is nearly amorphous at below 250 °C, with (100) as the major phase at below 400 °C, and (002) dominated at higher temperatures. The X-ray photoelectron spectroscopy spectra reveals the unintentional oxygen incorporation into the films in the forms of Ga2O3 and Ga-OH. The amount of Ga-O component decreases, whereas the Ga-Ga component rapidly increases at 400 and 450 °C, due to the decomposition of TMG. The substrate temperature of 350 °C with the highest amount of Ga-N bonds is, therefore, considered the optimum substrate temperature. This study is helpful for improving the quality of PEALD GaN films.

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Section: Introductionmentioning

confidence: 99%

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

et al. 2022

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Effect of AlN/GaN supercycle ratio on properties of AlxGa1−xN films using super-cycle plasma enhanced atomic layer deposition

Zhang,

Ren,

Hsu

et al. 2024

Journal of Alloys and Compounds

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Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

Wang

et al. 2022

Mater. Res. Express

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We studied the influence of temperature and pressure on the surface morphology and V-defects of the InGaN films. It was found that an appropriate increase in the growth temperature enhanced the mobility of Ga and In atoms, smoothened the surface of the InGaN thin film samples, and improved the growth quality. Simultaneously, increasing the temperature appropriately reduced the surface roughness of the sample and the defect density of the V-defects. It is also found that under the same temperature conditions, a lower pressure weakens the incorporation barrier of atoms, enhances the incorporation efficiency of In atoms, and improves the growth quality of InGaN.

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Reliability Research of GaN-Based blue Semiconductor Lasers

Cited by 4 publications

References 20 publications

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Effect of AlN/GaN supercycle ratio on properties of AlxGa1−xN films using super-cycle plasma enhanced atomic layer deposition

Influence mechanism of growth temperature and pressure on surface morphology and defects of InGaN materials

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