Reliability of visible GaN LEDs in plastic package

Meneghesso, G.; Levada, Simone; Zanoni, Enrico; Scamarcio, Gaetano; Mura, Giovanna; Podda, Simona; Vanzi, Massimo; Du, Shaowu; Eliashevich, I.

doi:10.1016/s0026-2714(03)00289-0

Cited by 52 publications

(19 citation statements)

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“…Moreover, it is conceivable that LEDs of this type will be subject to further improvements in materials and structure, resulting in even higher levels of brightness. At present, data collection regarding their long-term stable performance is also being advanced [4][5][6][7][8]. However, little data have been produced regarding the reliability of the white LED based on a wideband gap semiconductor [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Long-term accelerated current operation of white light-emitting diodes

Yanagisawa

Kojima

2005

Journal of Luminescence

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Section: Introductionmentioning

confidence: 99%

Long-term accelerated current operation of white light-emitting diodes

Yanagisawa

Kojima

2005

Journal of Luminescence

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“…With aging time increasing, the non-radiative recombination defects increases in the active region of the LED. G.Meneghesso found [7][8][9], when the defects of LED aggregated to an extent, it will change the surface topography of the chip. Under the atomic force microscopy, it can be observed that the dark areas increase in the surface of the chip after aging.…”

Section: Definition Of Dark Pointsmentioning

confidence: 99%

“…Also, some researches try to find the relationship between microstructure and luminescence efficiency [7][8][9]. And they study the point defects, extended structural defects and other defects on the surface of the chip by atomic force microscopy (AFM), cathode luminescence measurements and transmission electron microscopy to observe the variation of pits on a microchip.…”

Section: Introductionmentioning

confidence: 99%

A research on the reliability of light-emitting diode based on analyzing of chip image

Ruan

Qian

2016

MATEC Web Conf.

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Abstract. This paper proposes a new method for studying the reliability of high-power light-emitting diode (LED) by analyzing chip images taken from a batch of LEDs which are selected to conduct the accelerated aging test lasting for 1400 hours. To exclude the disturbance of electrode in these images, an image processing algorithm based on projection is used to extract the interested section. An index called "dark point" which is related to non-radiative combination to describe the reliability of LED is proposed. The method is based on analyzing the variation trends of dark points in the extracted section of these images. The results show that the proportion of the dark point increases with aging time increasing. The lifetime of LED with higher increasing rate is shorter. Based on the increasing rate of dark point, the lifetime of the chip can be predicted in an easier way.

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“…If the thickness of the die attach is not uniform under the chip and some void are present can contribute to an increase of the series resistance [5]. (b) Discoloration and cloudiness of encapsulating epoxy that is caused by excessive heat at the p-n junction of the LED [6].…”

Section: Analysis Of Failurementioning

confidence: 99%