Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications

Influence of growth temperature on the structure and electrical properties of high‐permittivity TiO2 films in TiCl4‐H2O and TiCl4‐O3 atomic‐layer‐deposition processes

“…The films deposited from TiCl 4 and H 2 O at 300 and 400 8C showed k values of 141 and 167, respectively. These values were markedly higher than those of the films grown from TiCl 4 and O 3 at comparable temperatures. Development of more preferential (001) orientation of TiO 2 rutile phase in the films deposited from TiCl 4 and H 2 O [13] could be an explanation for this difference because the (001) orientation of rutile has shown higher k values than other orientations of this phase have done [25,26].…”

“…This kind of surface oxygen was needed for formation of chemisorbed surface species during the TiCl 4 supply. At 300-425 8C, T G had a minor influence on the growth rate in the TiCl 4 À1 were obtained at 250-400 8C (Fig. 1).…”

“…However, the slopes of the linear regressions (Fig. 3) revealed that the stabilized growth rates of TiO 2 from TiCl 4 and O 3 were not higher than those from TiCl 4 and H 2 O. For this reason, the mean growth rates for the relatively thin films deposited from TiCl 4 and O 3 ( Fig.…”

“…2) of films deposited on RuO 2 from TiCl 4 and H 2 O as well as from TiCl 4 and O 3 revealed growth of rutile at T G ! 225 8C.…”

“…For separate determination of k for the dielectric layers and capacitance equivalent interface thicknesses, CET versus thickness dependencies for TiO 2 films deposited at 150, 300, and 400 8C from TiCl 4 and H 2 O and at 300 and 400 8C from TiCl 4 and O 3 process were recorded (Fig. 5).…”