Reliability of GaN-Based Power Devices

Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; Ruzzarin, Maria; Rossetto, Isabella

doi:10.1007/978-3-319-77994-2_4

Cited by 2 publications

(6 citation statements)

References 33 publications

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“…GaN-based electronics has enabled tremendous advances in high-power, high-frequency and high-temperature applications [1][2][3]. Compared to conventional semiconductors, widebandgap III-nitride materials offer improved chemical robustness, superior thermal stability and a larger breakdown field, rendering this material system suited for harsh environments beyond the limits of Si electronics [1].…”

Section: Introductionmentioning

confidence: 99%

“…The exceptional performance demonstrated for GaNbased n-channel devices, such as lower specific on-resistance and higher electron mobility (∼2000 cm 2 V −1 s −1 ) compared to Si-based transistors, is ascribed to the high-density (∼10 13 cm −2 ) two-dimensional electron gas (2DEG) found in undoped metal-face AlGaN/GaN heterostructures [1][2][3][4]. In analogy to the formation of a 2DEG, the inherent polarization can be also used to generate a two-dimensional hole gases (2DHG) at a low-polarization, low-bandgap and a high-polarization, high-bandgap interface .…”

Section: Introductionmentioning

confidence: 99%

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MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

Beckmann¹,

Wieben²,

Zweipfennig³

et al. 2022

J. Phys. D: Appl. Phys.

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GaN/AlxGa1-xN heterostructures were grown by metal-organic vapor phase epitaxy (MOVPE) to study in detail the formation of two-dimensional hole gases (2DHG). In contrast to the common double-heterostructure approach to create 2DHG, which is based on GaN buffer layers and leads to the parallel formation of a two-dimensional electron gas (2DEG), this concept is designed to create a 2DHG only. The Al mole fraction in the AlGaN buffer and the GaN channel thickness are each varied to investigate their influence on 2DHG properties. The carrier concentrations as determined by room temperature Hall measurements follow the expected trend given by the Al content dependence of the spontaneous polarization of the relaxed AlGaN buffer. A 2DHG density as high as of 1.6·1013 cm-2 with a negligible dependence on temperature (80 – 300 K) is determined for a GaN/Al0.29Ga0.71N heterostructure by temperature-dependent Hall measurements. Higher carrier concentrations can also be achieved, yet strain relaxation of the GaN channel degrades the transport properties for Al contents above 30 %.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

Beckmann¹,

Wieben²,

Zweipfennig³

et al. 2022

J. Phys. D: Appl. Phys.

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“…However, in contrast to SiC, GaN has been widely used in optoelectronics and radio frequency applications due to its broad energy band and potential high-frequency properties [140]. A lot of electronics, such as radio transmitters, plasma generators, MRI scanners, power converters, and wireless power transfer (WPT), among many others, depend on radio frequency (RF) power [141]. GaN's wide bandgap, huge critical electric field, strong electron mobility, and reasonably good thermal conductivity make it appealing for high-voltage, high-frequency, and high-temperature applications.…”

Section: Ganmentioning

confidence: 99%

“…GaN heterostructure field-effect transistors (HFETs), a kind of wide bandgap semiconductor electronic components, are popular in high-frequency and high-power applications due to their advantages of having a high breakdown voltage and high electron mobility [134,135]. Vertical power devices based on GaN material are still at a very early research stage [136][137][138][139][140][141][142][143][144][145][146][147][148], and there are currently no commercial vertical power devices accessible due to the difficulty in producing low-cost GaN epitaxial wafers, which is required to construct vertical power devices.…”

Section: Gan Heterojunction Field-effect Transistor (Heft)mentioning

confidence: 99%

“…There has long been speculation that GaN will eventually replace Si power transistors. The application areas of GaN are electric vehicles, high-speed railways, household appliances, industrial motors, aerospace, smart grid, solar energy generation, wind power generation, and large capacity [141]. It is helpful for various RF applications, including satellite communications and 5G, 6G, and mobile communications, since it can operate at high frequencies, control high levels of power, and sustain a high operating voltage [177].…”

Section: Applications Of Ganmentioning

confidence: 99%

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Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Rafin,

Ahmed,

Haque

et al. 2023

Micromachines

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This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching frequency, and device packaging. The historical evolution of each material is traced from early research devices to current commercial offerings. Significant focus is given to SiC and GaN as they are now actively competing with Si devices in the market, enabled by their higher bandgaps. The paper details advancements in material growth, device architectures, reliability, and manufacturing that have allowed SiC and GaN adoption in electric vehicles, renewable energy, aerospace, and other applications requiring high power density, efficiency, and frequency operation. Performance enhancements over Si are quantified. However, the challenges associated with the advancements of these devices are also elaborately described: material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference. Alongside the cost reduction through improved manufacturing, material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference are critical hurdles of this technology. The review analyzes these issues and emerging solutions using advanced packaging, circuit integration, novel cooling techniques, and modeling. Overall, the manuscript provides a timely, rigorous examination of the state of the art in wide bandgap power semiconductors. It balances theoretical potential and practical limitations while assessing commercial readiness and mapping trajectories for further innovation. This article will benefit researchers and professionals advancing power electronic systems.

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Reliability of GaN-Based Power Devices

Cited by 2 publications

References 33 publications

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

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