Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation

“…Though certain efforts were made to use methods such as active channel freewheeling [28] to minimize the effect of the recovery charge, the performance of the body diode during the reverse recovery could not be improved. Recently developed SiC MOSFETs body diode have reduced the magnitude of the recovery charge [29] which is a considerable step forward, but may also present significant robustness issues [30].…”

Overview of Silicon Carbide Technology: Device, Converter, System, and Application

“…The lower short circuit withstand capability requires a faster response time of the protection circuit to guarantee SiC MOSFETs operating within the safe operating areas (SOA). In addition to thermal breakdown, an overcurrent condition also has negative impact on the long term stability of SiC MOSFETs, which had in the past suffered gate oxide reliability issues caused by poor interface quality [117]. Under high di/dt and dv/dt condition, it is difficult for a short circuit protection scheme to achieve fast response time and strong noise immunity simultaneously.…”

A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors

“…1,2) Through recent progress, 1-kV-class SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) are now viable for mass production with low on-resistance and high switching frequency, although they have suffered from low channel mobility at the SiO 2 =SiC interface and gate threshold-voltage instability. [3][4][5] SiC bipolar junction transistors (BJTs) are also candidates for power switching devices. [6][7][8][9][10] Owing to the high critical electric field in SiC, SiC BJTs are free from second breakdown phenomena, 11) which was a critical issue for Si power BJTs.…”