Reliability issues in GaN and SiC power devices

Ueda, T.

doi:10.1109/irps.2014.6860629

Cited by 36 publications

(17 citation statements)

References 20 publications

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“…It is important to note that the power module used to build the converter consists of parallel connection of single chips from the first generation of Cree devices. These components have evolved into a second generation and even a third where the reliability issues as well as performance have been investigated and improved [18] [19]. Therefore, in this paper, the reliability calculations have been performed using the data from the second generation.…”

Section: Voltage Source Convertermentioning

confidence: 99%

Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications

Colmenares

Sadik

Hilber

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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Silicon Carbide as an emerging technology offers potential benefits compared to the currently used Silicon. One of these advantages is higher efficiency. If this is targeted, reducing the on-state losses is a possibility to achieve it. Parallel-connecting devices decrease the on-state resistance and therefore reducing the losses. Furthermore, increasing the amount of components introduces an undesired tradeoff between efficiency and reliability. A reliability analysis has been performed on a threephase inverter for motor drive applications rated at 312 kVA. This analysis has shown that the gate voltage stress determines the reliability of the complete system. Nevertheless, decreasing the positive gate-source voltage could increase the reliability of the system approximately 8 times without affecting the efficiency significantly. Moreover, adding redundancy in the system could also increase the mean time to failure approximately 5 times.

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Section: Voltage Source Convertermentioning

confidence: 99%

Reliability analysis of a high-efficiency SiC three-phase inverter for motor drive applications

Colmenares

Sadik

Hilber

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…1, JANUARY 2015 a breakdown voltage of 600 V with the 10 μm gate spacing (Lgg) between the two gates. Because the current collapse is caused by the electron trapping by defects in the GaN layer and the interface between the passivation film and the AlGaN layer, the fabricated GaN-GIT bi-directional switch achieves current-collapse-free operation due to the improved device structure and the processing to eliminate the trapping effects [19] This GaN-GIT bi-directional switch with the dual gate needs two isolated gate signals against each source ports. Although the two isolated RF signals with separate grounds can be easily provided by the proposed isolated dividing coupler, in Drive-by-Microwave technology, the DC gate voltage needs to be regenerated from the RF signal.…”

Section: Gan Bi-directional Power Switch Integration Chipmentioning

confidence: 99%

A 3-Phase AC–AC Matrix Converter GaN Chipset With Drive-by-Microwave Technology

Nagai

Yamada

Negoro

et al. 2015

IEEE J. Electron Devices Soc.

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This paper describes an ultracompact GaN 3 × 3 matrix power converter with drive-bymicrowave (DBM) technology, which comprises a radio frequency (RF)-triggered GaN-gate injection transistor (GIT) bidirectional power switches integration chip with co-integrated RF rectifiers, novel isolated dividing couplers in a printed circuit board to reduce complicated gate lines, and low-consumption GaN/Si DBM gate driver on a chip that controls nine bi-directional power switches. The proposed 4.0-kW GaN 3 × 3 matrix power converter is extremely compact, measuring only 18 × 25 mm due to the use of GaN-GIT power device integration technology and DBM technology that provides isolated gate signals by microwave wireless power transmission and eliminates the need for photo-couplers and isolated power supplies. The GaN/Si DBM driver realizes low power consumption of only 2.0 W as a result of gate power sharing with three RF oscillators. The sequential switching operation by the fabricated GaN 3 × 3 matrix converter was successfully achieved.INDEX TERMS Gallium nitride, driver circuits, power integrated circuits, power semiconductor switches, matrix power converter, microwave circuits.

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“…The potential of these diamond devices will necessitate the study of other design considerations such as complexity, cost, power density and reliability. Reliability issues relating to widely investigated GaN and SiC power devices are investigated in literature [6][7]. For devices which need a metal oxide semiconductor interface, an obvious reliability concern is the stability of the gate stack.…”

Section: Introductionmentioning

confidence: 99%