2009
DOI: 10.1016/j.microrel.2008.10.008
|View full text |Cite
|
Sign up to set email alerts
|

Reliability assessment of 1.55-μm vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2011
2011
2023
2023

Publication Types

Select...
4
3
1

Relationship

0
8

Authors

Journals

citations
Cited by 14 publications
(3 citation statements)
references
References 10 publications
0
3
0
Order By: Relevance
“…Based on the statistical distributions of the totality of accelerated lifetime test (ALT) data, VCSEL aging parameters were calculated: activation energy value of E a =0.67 eV and current exponent factor N=3.93. The value of activation energy of 0.67 eV is close to 0.79 eVthe activation energy of 1550 nm VCSELs with active region in the same (InAlGaAs/InP) material system grown by MOVPE [24], even though devices with undercut apertures investigated in [24] do not exhibit gradual wear-out in time during ALT tests. Predicted operation lifetimes are calculated based on the accelerated life-time data and applying the acceleration factors and the pass-fail condition of 2-dB change.…”
Section: Telcordia-grade Reliability Testingmentioning
confidence: 52%
“…Based on the statistical distributions of the totality of accelerated lifetime test (ALT) data, VCSEL aging parameters were calculated: activation energy value of E a =0.67 eV and current exponent factor N=3.93. The value of activation energy of 0.67 eV is close to 0.79 eVthe activation energy of 1550 nm VCSELs with active region in the same (InAlGaAs/InP) material system grown by MOVPE [24], even though devices with undercut apertures investigated in [24] do not exhibit gradual wear-out in time during ALT tests. Predicted operation lifetimes are calculated based on the accelerated life-time data and applying the acceleration factors and the pass-fail condition of 2-dB change.…”
Section: Telcordia-grade Reliability Testingmentioning
confidence: 52%
“…In 2003, the reliability of 1310 nm VCSELs with InGaAsN quantum well region was studied, and the median life at operating conditions was predicted [9] . In 2007, The activation energy of 0.79 eV and median lifetime of 2×10 7 hours for the 1550 nm VCSELs were extrapolated [10] . The 1310 nm long-wavelength VCSELs with InGaAsN quantum well were aged for 75 hours at 7.5mA and 150°C, and the dislocation arrays were observed by TEM.…”
Section: Introductionmentioning
confidence: 99%
“…According to the manufacturer's information, the basic device structure was the same as given in Fig. 1(a) [21]. In our experiment, the optical spectra of the VCSEL's output were measured with an optical spectrum analyzer (OSA) in DC and AC electric driving conditions.…”
Section: Introductionmentioning
confidence: 99%