Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device

Luo, Laiqiang; Shubhakar, K.; Mei, Sen; Raghavan, Nagarajan; Zhang, F.; Shum, D.; Pey, K. L.

doi:10.1109/irps45951.2020.9128911

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2020 IEEE International Reliability Physics Symposium (IRPS) 2020

DOI: 10.1109/irps45951.2020.9128911

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Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device

Laiqiang Luo

K. Shubhakar

Sen Mei

et al.

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Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device

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References 14 publications

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