Reliability Analysis of a Three-Port Converter with a Semi-Regulated Bus Voltage Structure with an MPPT Function for Near-Space Vehicles

Liu, Qianshi; Xu, Guoning; Li, Zhaojie; Jia, Zhongzhen; Gao, Yang; Li, Yongxiang; Yang, Yanchu

doi:10.1007/s42835-022-01319-5

Cited by 1 publication

(1 citation statement)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reliability and MTBF of the boost converter applied for a PV system is computed (24) . A reliable three port converter is presented for near space vehicles (25) . A multi input DC/DC converter applicable for fuel cell and PV systems is described (26) .…”

Section: Introductionmentioning

confidence: 99%

Failure Rate Analysis of Full Bridge DC/DC Converter in Hard and Soft Switching Control Schemes

Chavan¹,

Chavan²

2023

IJST

View full text Add to dashboard Cite

Objectives:To calculate the failure rate of full bridge DC/DC converter for both hard and soft switching control schemes. Method: The analysis is done at same power level and same operating frequency. A 500 W photovoltaic system is simulated for experimentation on failure rate assessment of full bridge DC/DC converter with hard and soft switching control schemes. The individual component failure rates in hard switching control scheme and soft switching control scheme are calculated. Military handbook MIL-HDBK 217F is used to calculate the individual component failure rate. Then MTBF rates for both switching schemes is computed and compared. Findings: Reliability calculations are done for same input power and operating frequency of 10 KHz. Results have shown that semiconductor power switches, diodes and capacitor undergoes high stress in hard switching control scheme compared with soft switching scheme. The total failure rate for hard switched control scheme is 7.7910 while for soft switched control scheme total failure rate is 6.2715. The MTBF for hard control scheme is 128353.22 while for soft switched control scheme MTBF is 159451.48. Soft switched control schemes exhibited 81.92 % decrement in failure rate for IGBT, 68.16 % decrement for diodes and 50% decrement for capacitors. For transformer and inductor same failure rates are observed in both control schemes. This showed that soft switching control scheme offers lower failure rate and better reliability than hard switched control scheme. Novelty: This study has compared and calculated reliabilities for two different control schemes viz. hard switched and soft switched control schemes on same circuit platform. Individual component stress levels are computed for both control schemes and it is proved that stress on individual semiconductor components is lower in soft switched control scheme than in hard switched control scheme.

show abstract

Section: Introductionmentioning

confidence: 99%