Relaxor Ferroelectric BaTiO3–Bi(Mg2/3Nb1/3)O3 Ceramics for Energy Storage Application

Wang, Tong; Jin, Li; Li, Chunchun; Hu, Qingyuan; Wei, Xiaoyong

doi:10.1111/jace.13325

Cited by 472 publications

(196 citation statements)

References 58 publications

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“…4 and 6, which could be regarded as the desorption event; susceptibility should increase with temperature due to the nature of the material, there are no ferroelectric transitions to cause decrease in the real part of the susceptibility. [20][21][22]25 The number of relaxations that can be observed in wet sample is larger than the dried sample. As discussed previously, at high temperatures close to 300 C, the data for the wet and dried sample are converging to each other indicating the similarities in both responses and confirm that the initial measurement in the first ramp is a dry-bake cycle.…”

Section: Dielectric Relaxationsmentioning

confidence: 99%

“…The method has been applied to various different material systems. [7][8][9][10][11][20][21][22] Electrical properties of materials can be determined from the impedance measurements by performing current measurements with applied voltage and using the geometrical capacitance C 0 , the geometry of the sample. For example, for the complex permittivity, " Ã is estimated from the current measurement as a complex capacitance C Ã for a given geometrical shape of the measurement electrodes, which determine the geometrical capacitance C 0 , Here, the angular frequency, !, independent material properties are of relative permittivity at high frequencies, " 1 , and Ohmic (direct-current) conductivity, 0 ; ı ¼ ffiffiffiffiffiffi ffi À1 p .…”

Section: Introductionmentioning

confidence: 99%

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Change in dielectric relaxation with the presence of water in highly filled composites

Tuncer

2017

J. Adv. Dielect.

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It is important to determine the dielectric characteristics of semiconductor encapsulation materials based on epoxy resins. We employed the dielectric spectroscopy technique to investigate the dielectric relaxation in the presence of water and how it changes the relaxation. It was observed that the dielectric relaxation of the material was significantly influenced by absorbed water, the local segmental motion (also known as Johari-Goldstein ( ) relaxation) was influenced most by the presence of the water, it was modified by the wet sample compared to dry one, and required high activation energy. The relaxation related to the glass transition was contributed by the cooperative motion (the -relaxation) of the epoxy resin system. The -relaxation was shifted to a low temperature in the wet sample compared to dry one. The relaxation was modeled with a clear Vogel-Fulcher-Tammann-Hesse (VFTH) behavior; the Vogel temperature of the wet sample was 8 K lower than the dry sample. The presence of water acts as a plasticizer for the molecular relaxation, and speed-up the cooperative process. The measured data were also used to estimate the electrical properties of the resin system by employing an effective-medium model together with a porous media continuum model by taking into account the physical properties of the system. It is already known that the influence of water in semiconductor packaging is important in sensitive applications. The presented measurements and the analysis method would be appreciated within the semiconductor packaging community to improve material selection and performance evaluation efforts.

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Section: Dielectric Relaxationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Change in dielectric relaxation with the presence of water in highly filled composites

Tuncer

2017

J. Adv. Dielect.

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“…So, there are two possible routes to improve the energy-storage density of AFE and FE ceramics for energy storage applications: One is to enhance the BDS for high E and another is to increase the limit of integration by enlarging the difference between the P max and P r . For the first route, it was found that AFE ceramic ( [17][18][19][20][21] It indicated that partial occupancy of Bi 3þ at the A site of the perovskite compound could effectively improve the energy storage properties. As a promising candidate system, relaxor ferroelectrics BaTiO 3 (BT)-based ceramics play a key role in the area of energy density capacitors because of their low P max , high P r , and low loss.…”

mentioning

confidence: 99%

Enhanced energy storage density by inducing defect dipoles in lead free relaxor ferroelectric BaTiO3-based ceramics

Zhou

Pang

2017

Applied Physics Letters

148

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In this work, Mn-doped 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3 ceramics were prepared by the conventional solid state reaction method, and the effect of defect dipoles on energy storage properties of lead free relaxor ferroelectric BaTiO3-based ceramics was studied. The crystal structure, dielectric properties, and energy storage properties were explored in detail. It was found that polarization hysteresis (P-E) loops of 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3-x wt. % MnCO3 (0.2–0.5) ceramics took on high maximum polarization (Pmax) and low remanent polarization (Pr). Meanwhile, recoverable energy density (Wrec) and energy conversion efficiency (η) were obviously enhanced by inducing defect dipoles into BaTiO3-Bi(Mg2/3Nb1/3)O3 relaxor ferroelectrics. The 0.9BaTiO3-0.1Bi(Mg2/3Nb1/3)O3-0.3 wt. % MnCO3 ceramic was found to exhibit good energy storage properties with a Wrec of about 1.70 J/cm3 and a η ∼ 90% under an electric field of 210 kV/cm. The breakdown electric field and Wrec of BaTiO3-based materials were significantly increased in the present work, and they might be good candidates for high power energy storage applications.

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“…Wang et al, examined the solid solution, (1-x)BaTiO3-xBi(Mg2/3Nb1/3)O3, reporting basic dielectric properties and energy storage capabilities [42]. Composition x = 0.2 exhibited temperature-stable dielectric response with r varying from 628-787 in the temperature range -50 to +300ºC: tan ≤ 0.025 over the temperature range 0-150ºC (estimated).…”

Section: Batio3-bi(mg2/3nb1/3)o3mentioning

confidence: 99%

High temperature dielectric ceramics: a review of temperature-stable high-permittivity perovskites

Zeb

Milne

2015

J Mater Sci: Mater Electron

147

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Recent developments are reviewed in the search for dielectric ceramics which can operate at temperatures > 200ºC, well above the limit of existing high volumetric efficiency capacitor materials. Compositional systems based on lead-free relaxor dielectrics with mixed cation site occupancy on the perovskite lattice are summarised, and properties compared. As a consequence of increased dielectric peak broadening and shifts to peak temperatures, properties can be engineered such that a plateau in relative permittivity-temperature response ( r-T) is obtained, giving a ±15%, or better, consistency in r over a wide temperature range. Materials with extended upper temperature limits of 300°C, 400°C and indeed 500°C are grouped in this article according to the parent component of the solid solution, for example BaTiO3 and Na0.5Bi0.5TiO3. Challenges are highlighted in achieving a lower working temperature of -55°C, whilst also extending the upper temperature limit of stable r to ≥ 300°C, and achieving high-permittivity and low values of dielectric loss tangent, tan . Summary tables and diagrams are used to help compare values of r, tan , and temperature ranges of stability for different materials.

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Relaxor Ferroelectric BaTiO₃–Bi(Mg_2/3Nb_1/3)O₃ Ceramics for Energy Storage Application

Cited by 472 publications

References 58 publications

Change in dielectric relaxation with the presence of water in highly filled composites

Change in dielectric relaxation with the presence of water in highly filled composites

Enhanced energy storage density by inducing defect dipoles in lead free relaxor ferroelectric BaTiO3-based ceramics

High temperature dielectric ceramics: a review of temperature-stable high-permittivity perovskites

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