Relaxor behavior of pulsed laser deposited ferroelectric (Pb1−xLax)(Zr0.65Ti0.35)O3 films

Abstract

Significant enhancement of energy-storage performance of (Pb0.91La0.09)(Zr0.65Ti0.35)O3 relaxor ferroelectric thin films by Mn doping Large enhancement of energy-storage properties of compositional graded (Pb1−xLax)(Zr0.65Ti0.35)O3 relaxor ferroelectric thick films Appl. Phys. Lett. 103, 113902 (2013); 10.1063/1.4821209 Field-induced dielectric properties of laser ablated antiferroelectric ( Pb 0.99 Nb 0.02 )(Zr 0.57 Sn 0.38 Ti 0.05 ) 0.98 O 3 thin films

Structure and dielectric properties of sol–gel 9/65/35 PLZT thin films

“…The values of ε increase less than twice in the peak in compare with values measured away from the peak 16,17 (Fig. 3) whereas it is nearly one order in the case of bulk 8/65/35 or 9/65/35 PLZT.…”

“…[8][9][10][11] The values of ε we report are in a good agreement with the results for laser ablated films. 17 The room-temperature values of ε of sol-gel films were reported nearly three times more with nearly the same tgδ (decreased from 0.032 down to 0.022 compared with 0.035 ÷ 0.020 in our case as frequency increased from 500 Hz up to 1 MHz). 18 However, in that work more the measuring field was more than one order of magnitude higher and the films were higher (1 1 1) c oriented.…”

“…[9][10][11] The shift of peaks towards higher temperatures was also observed in rf-sputtered 16 as well as in pulsed laser deposited PLZT thin films. 17 One of the possible reason for that might be the lower La content in films than it was expected. However, that cannot explain the considerably lower values of ε in thin films in compare with bulk 8/65/35 or 9/65/35 PLZT where the values of ε lie in the region from 1500 up to 3000 below the peaks in the same frequency window.…”

Polarization relaxation in thin-film relaxors compared to that in ferroelectrics

“…5,6 However, also both the ac field dependent piezoelectric effect and the relatively broad polarization -electric field, or E P − , hysteresis loops have been observed. [7][8][9] A FE-like self-polarized state has been suggested to be responsible for that. 7 On the other side, both the onset of the polar state under an applied dc field 10 and the effects of applied ac field 6 have been demonstrated to result from the orientation of the randomly interacting dipoles in a random field.…”

Enhanced dielectric nonlinearity in epitaxial Pb0.92La0.08Zr0.52Ti0.48O3 thin films

“…Recently, lanthanum doped PZT with different Zr/Ti ratio, such as 65/35, 53/47, or 20/80, has been investigated, since it can effectively reduce oxygen vacancy, decrease leakage current, and lower the fatigue and domain pinning. [8][9][10] In general, higher La content makes the peaks of the dielectric permittivity broader and the temperature of the permittivity maxima T m lower. For example, the T m of La-doped PZT with a Zr/Ti ratio of 65/35 decreased from 350 C to 105 C with increasing La content from 0 to 8 at.…”