Relaxation processes in conductivity of Cd1 − x
                     Mn
                x
              Te crystals (0.02 &lt; x &lt; 0.55)

Nikonyuk, E. S.; Zakharuk, Z. I.; Kuchma, M. I.; Shlyakhovyi, V. L.; Rarenko, A. I.; Yuriychuk, Ivan

doi:10.1134/s1063782608090029

Cited by 6 publications

(4 citation statements)

References 1 publication

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“…In particular, a large sp-d exchange interaction between the charge carriers and the magnetic ions leads to strong band splitting in Cd1-xMnxTe crystals, which results in the giant Faraday rotation and Zeeman splitting [1,6]. Recently, Cd1-xMnxTe alloy was proposed as a material for nuclear radiation detectors [7,8] due to its good electron transport properties and high resistivity [9,10].…”

Section: Introductionmentioning

confidence: 99%

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

Yuriychuk

Fochuk

Bolotnikov

et al. 2019

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI

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The structural, electronic and magnetic properties of Cd1-xMnxTe alloy in the zinc-blende (ZB) phase were studied within the framework of spin-polarized density functional theory using the generalized gradient approximation (GGA). We employed the GGA+ U SIC (GGA method plus self-interaction correction potential), which gives a better description of systems with strong Coulomb correlations of the d-electrons. In this paper, we first discuss implementation of the GGA+U method to the ground state calculations of pure CdTe and ferromagnetic MnTe. The alloys are modelled at selected compositions as ordered structures described in terms of periodically repeated supercells for the compositions of x = 0.25, 0.5, and 0.75. The compositional dependences of the lattice constant, electronic band structure and partial densities of states of the ferromagnetic Cd1-xMnxTe alloy were also studied. We estimated the spin-exchange splitting energies produced by the Mn 3d-states and determined the exchange constants for the conduction and valence bands of the alloy. The energy positions of the occupied and unoccupied Mn 3d-bands in the electronic structure of the ferromagnetic Cd1-xMnxTe alloy are also presented. Our calculations based on the GGA+ U SIC approach agree well with the available experimental data and other calculations.

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Section: Introductionmentioning

confidence: 99%

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

Yuriychuk

Fochuk

Bolotnikov

et al. 2019

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI

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“…Hall mobility of holes of all experimental samples over 300 K lied within (45 -60) cm 2 /(V•s) and practically did not depend on the crystal composition (x). In the "heatingcooling" cycles, the results of R H and ρ were reproducible, and there were no isothermal relaxations characteristic for undoped Cd(Mn)Te crystals [27]. In this respect, these crystals were not different from the p-CdTe-Ge crystals [6,7].…”

Section: Resultsmentioning

confidence: 99%

Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals

Solodin¹,

Nikoniuk

Раренко³

et al. 2019

PCSS

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Ge-doped Cd1-xMnxTe (x = 0.02, 0.04, 0.08) crystals were grown by the Bridgman method. Carried out electrical measurements in the temperature range 280 – 420 K have found that the crystals’ hole conductivity is controlled by the deep compensated acceptors, whose ionization energy (εA) was increased with the content Mn (x) according to the relation εA = 0.6 (1 + 2х) eV. At 300 K: ρ = (108-109) (Ohm´cm), RH = (5×109-5×1010) cm3/C; mobility of current carriers ~ 50 cm2 /(V´s).

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“…In [5], a hypothetical model was proposed -associations of doped Cu atoms with ionized acceptors of non-vacancy origin, leading to a sharp decrease in the diffusion rate in cadmium telluride films.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

Utamuradova,

Daliev,

Muzafarova

et al. 2023

East Eur. J. Phys.

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The process of diffusion of labeled copper atoms in p-CdTe<Pb> coarse-block films with a columnar grain structure has been studied. The CdTe<Pb> film is a p-type semiconductor, where an increase in the Pb concentration in the composition of the CdTe films increases the resistivity ρ of the structure. When the Pb concentration in CdTe changes from 1018 to 5·1019 cm-3, the hole concentration decreases by more than 3 orders of magnitude at a constant operating level depth of EV + (0.4 ± 0.02) eV. This may indicate that the concentration of acceptor defects, which are formed in the films due to self-compensation upon doping with a PbCd donor, exceeds the number of the latter. Electrical measurements by the Hall method were carried out at a direct current and a temperature of 300 K. As a result, an increase in the temperature of films on a Mo-p-CdTe<Pb> substrate during annealing affects the electrical parameter of charge carrier mobility µ, it decreases significantly. X-ray diffraction analysis showed that on the diffraction patterns of samples of p-CdTe<Pb> films, all available reflections correspond to the CdTe phase and up to х = 0.08 do not contain reflections of impurity phases and have a cubic modification. Based on the results of the calculation, it was established that the low values of the diffusion coefficient of Cu atoms are due to the formation of associates of the A type , which are directly dependent on the concentration of atoms. Diffusion length Ln and lifetime τn of minority current carriers in large-block p-type cadmium telluride films, which can also be controlled by introducing lead atoms into cadmium telluride.

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Relaxation processes in conductivity of Cd1 − x Mn x Te crystals (0.02 < x < 0.55)

Cited by 6 publications

References 1 publication

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

Ab initio GGA+U investigations of the structural, electronic, and magnetic properties of Cd1-xMnxTe alloy

Electro-Physical Properties of Ge-doped Cd1-xMnxTe (x < 0.1) Crystals

Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

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