Relaxation phenomena in electronic and lattice subsystems on iron surface during its ablation by ultrashort laser pulses

Structural and electrical characteristics of a hyperdoped silicon surface layer with deep donor sulfur states

“…Laser irradiation of a silicon wafer was per formed by multiple focused infrared pulses of a Ti:Sa laser (Avesta Project, central wavelength of 744 nm, spectral FWHM of 12 nm, pulse duration of 100-110 fs (FWHM), pulse energy E up to 8 mJ in the TEM 00 mode [12]). A 0.5 mm thick n doped Si(100) wafer was fixed on the bottom of a BK 7 glass cuvette under a CS 2 liquid layer with thickness of ≈4 mm, arranged on a PC controlled three dimensional motorized translation stage 8SMC1 USBhF (Standa).…”

Ultrashort laser pulse ablation of copper, silicon and gelatin: effect of the pulse duration on the ablation thresholds and the incubation coefficients

“…The advantage of this technique is that the measurements can be performed at fluences well above threshold for which the detected fingerprint signals are clearly detectable by farfield microscopy [7]. The actual physical mechanisms of laser ablation depend on the type of materials and the irradiation properties such as laser wavelength [10], pulse duration [13][14][15][16][17][18][19] and repetition rate [14,20]. Change in the repetition rate affects the ablation threshold in two respects.…”

Fabrication of Superhydrophobic Coating on Stainless Steel Surface by Femtosecond Laser Texturing and Chemisorption of an Hydrophobic Agent

“…The obtained single-shot craters show that above some threshold fluence value F spal , which slightly differs with the increase in the pulse duration, a thin layer (x ≈ 12 nm, Fig. 1) of the material was removed via spallation from the steel surface irrespectively of the pulse duration [13]. This regime can be of interest for precise surface processing due to the fact that the spallation layer thickness is not influenced by variation in laser fluence in the range F spal < F < F frag (Fig.…”