Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET Characteristics of Phase-Change Memory in Cross-Point Structure

Hong, Seok Man; Kim, Myoungsub; Lee, Seong‐Hun; Ban, Sanghyun; Zang, Hwanjun; Choi, Hyejung; Kim, Tae-Hoon

doi:10.1109/led.2021.3125193

Cited by 4 publications

(3 citation statements)

References 10 publications

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“…Recently, chalcogenide materials devices have attracted considerable attention as memory devices. [24][25][26][27][28] Alloys and compounds composed of Ge 2 Sb 2 Te 5 (GST) chalcogenides are major materials used in phase change random access memory [29][30][31] and optical rewritable disks. Chalcogenides are suitable material candidates for realizing CBRAMs because of such unique properties as high ionic conductivity, various structural transformations, stable glass formation, and high defect density.…”

Section: Introductionmentioning

confidence: 99%

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development

Hong,

Park,

Jeong

et al. 2024

Adv Materials Inter

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Conductive bridge random‐access memory (CBRAM) are two terminal devices that offer excellent switching performance. In addition, CBRAM shows various switching modes, including volatile threshold switching (TS) and nonvolatile threshold switching (N‐TS). These properties expand its applications to memory, selector, biological synapses, and neurons. However, due to the uncontrollable behavior of stochastic switching between TS and N‐TS in CBRAM devices, a novel approach is needed to improve the switching performance of CBRAM. Moreover, conventional devices that have different stacking between TS and N‐TS increase fabrication cost and worsen the device yield. Here, the selector‐memory bi‐functionality with self‐current regulation effect of Ag‐inserted Ge2Sb2Te5 (GST) thin films is demonstrated. Selector‐memory bi‐functionality, having TS behavior with an adjustable on/off current, with confined conductive filaments (CFs) improves the uniformity and reduces the fabrication cost by implementing TS/N‐TS in a single stack. From the material analysis, it becomes evident that confined Ag‐based CFs within GST films are key factors for realizing selector‐memory bi‐functionality. The selector‐memory bi‐functionality is achieved through the reaction of Ag metal cations with non‐bonded Te atoms in GST film depending on field polarity. These results suggest that the Ag‐inserted GST film contributes to the development of large‐scale nonvolatile memory and neuromorphic application.

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Section: Introductionmentioning

confidence: 99%

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development

Hong,

Park,

Jeong

et al. 2024

Adv Materials Inter

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“…Recent studies have reported many switching mechanisms and their corresponding properties. [4][5][6][7][8][9][10][11][12][13][14][15][16] Physical considerations and models have been presented based on variations in the properties of the material and structure. However, although various distribution functions, such as Weibull, normal, and lognormal distributions, have been used to describe the distributional properties of the functions, no rationale for their selection has been presented.…”

Section: Introductionmentioning

confidence: 99%

Statistical modeling of V _th distribution in ovonic threshold switches based on physical switching models

Yokogawa¹

2023

Jpn. J. Appl. Phys.

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This paper discusses the statistical modeling of the Vth distribution of the ovonic threshold switch, a key component of high-speed, high-capacity storage-class memory. Based on three representative switching mechanisms—thermal runaway model, physically based electrical model, and two-state defect model—we propose a distribution function that explains Vth variation and a method for estimating and judging it. Through Monte Carlo simulations and analytical analysis of the distribution function, we examined the relationship between the segment Vth distribution and the Vth minimum distribution considering the chip-level scaling. The latter distribution approaches the Weibull distribution, but its convergence speed differs.

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“…Bursting dynamics [1,2], also called mixed-mode oscillations [3,4] or relaxation vibrations [5,6], created by the multi-time scale effect [7,8], is often observed in many nonlinear models, such as circuit oscillators [9,10], mechanical systems [11,12], nervous models [13,14] and chemical reactions [15,16]. Bursting oscillation is a complex dynamical behavior consisting of comparatively big-amplitude waves and approximately simple harmonic micro-amplitude vibrations, and is universally studied with the help of the slow/fast decomposition analysis that is proposed by in Rinzel [17] in 1985.…”

Section: Introductionmentioning

confidence: 99%

Intermittent bursting oscillations and the bifurcation analysis in an excited Rayleigh-Duffing oscillator

Zhang

Tang

Wang

2022

Preprint

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This paper investigates the bursting oscillations of a externally and parametrically forced Rayleigh-Duffing oscillator, in which three intermittent bursting types and one normal bursting type, namely intermittent “supHopf/supHopf-supHopf/supHopf” bursting, intermittent “fold/Homoclinic-Homoclinic/supHopf” bursting, intermittent “fold/Homoclinic-supHopf/supHopf” bursting and “fold/Homoclinic” bursting, are analyzed respectively. Recognizing the excitations as slow-varying state variables, the corresponding autonomous system can be exhibited and the bifurcation characteristics is briefly investigated, in particular, the Homoclinic bifurcation is analyzed by means of the Melnikov criterion. This paper shows that the dynamical behaviors of the excited Rayleigh-Duffing oscillator is touchy to the chosen of system parameters, different parameter conditions lead to distinct bifurcation structures that result in the trajectory approaching to different stable attractors and the appearance of different bursting forms. Our study increases the variousness of bursting oscillations and deepens the cognition of the generation mechanism of bursting dynamics. Lastly, the accuracy of the analysis presented in this paper is fully vindicated by the numerical simulations.

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Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET Characteristics of Phase-Change Memory in Cross-Point Structure

Cited by 4 publications

References 10 publications

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development

Statistical modeling of V _th distribution in ovonic threshold switches based on physical switching models

Intermittent bursting oscillations and the bifurcation analysis in an excited Rayleigh-Duffing oscillator

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Relaxation Oscillation Effect of the Ovonic Threshold Switch on the SET Characteristics of Phase-Change Memory in Cross-Point Structure

Cited by 4 publications

References 10 publications

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development

Statistical modeling of V th distribution in ovonic threshold switches based on physical switching models

Intermittent bursting oscillations and the bifurcation analysis in an excited Rayleigh-Duffing oscillator

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Statistical modeling of V _th distribution in ovonic threshold switches based on physical switching models