Relaxation of positive charge during bidirectional electric stress on metal–oxide–silicon capacitors

Abstract

Articles you may be interested inAn aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress Positive charge instability during bidirectional stress on metal-oxide-silicon capacitors A study on the capacitance-voltage characteristics of metal-Ta 2 O 5 -silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications J. Appl. Phys. 85, 4087 (1999); 10.1063/1.370315Fowler-Nordheim stressing of polycrystalline Si oxide Si structures: Observation of stress induced defects in the oxide, oxide/Si interface, and in bulk silicon

Modeling Hysteresis Phenomena in Nanotube Field-Effect Transistors

“…There is no explicit dependence of the hysteresis on temperature in our presented model, although this dependence is possibly related to the activation energy of the traps. A dependence similar to the one observed in NT FETs with the hysteresis greatly reduced at both low temperature (20 K) and high temperature (500 K) has been explained for MOSFETs invoking the anomalous positive charge [5]- [8]. This effect is also based on a reversible exchange of charge with the channel via a tunnelling mechanism.…”

“…Using (2), we can redefine the constants and to write (3) Substituting typical values for and for the FN tunneling in MOS devices, we calculate and . The kinetics law for the trapping of the electrons, a first-order differential equation for [8], is used to calculate the rate of the trapping (4) where is the trap density, is the trapping cross section of the trapping centers, is the tunneling current density, and is the filled trap density (empty traps are assumed to be positive and become neutral when an electron is trapped). The rate of the detrapping process, which corresponds to the hole injection and further recombination with trapped electrons, at the reverse polarity, is given by (5) The constants and in this equation are slightly different as compared to the previous one, as the potential barrier for the holes is higher than for the electrons.…”

Electric bidirectional stress effects on metal–oxide–silicon capacitors

“…These can be considered to be additional proof of the presence of amphoteric defects in the oxide as we suggested previously. 8,17 Sometimes we find this behavior in thin oxide.…”

“…It is well known that under a constant gate voltage the tunneling current increases in the beginning of the stress, indicating creation of the positive charge and then decreases showing the apparition of the negative charge in the oxide. 17 However, sometimes we observe another behavior of tunneling current variation during bidirectional stress. In the middle of Fig.…”

“…It is well known that if a sample is stressed under a constant current and then submitted to a constant current lower than the stressing one, the corresponding applied gate voltage increases, indicating the presence of electron trapping. 17 For the two injecting electrodes ͑poly.Si gate electrode or silicon substrate electrode͒ the ''extra'' diminution observed during bidirectional stress leads us to suggest neutralization of the created positive charge.…”