Relaxation and saturation of electrostriction in 10 mol% Gd-doped ceria ceramics

Yavo, Nimrod; Yeheskel, O.; Wachtel, Ellen; Ehre, David; Frenkel, Anatoly I.; Lubomirsky, Igor

doi:10.1016/j.actamat.2017.10.056

Cited by 53 publications

(87 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ca-doped PMN (Pb,Mg)NbO3 (ε r CaPMN ≈ 4000) [14]. Yavo et al also verified this type of electromechanical properties in bulk gadolinium doped ceria and another oxygen defective fluorite oxide (Bi2O3), which exhibit similar results, thus representing to a new class of electroactive materials [12] [15]. The atomistic model proposed by [16].…”

Section: Introductionmentioning

confidence: 77%

“…The data were fitted by equivalent circuit and analyzed by ZView software shareware version. The electromechanical measurement was performed using a proximity sensor (Capacitance, Lion) based system with a lock in detection, as previously reported in [12] [15]. Prior to measurement, the system was calibrated with PZT (Shenzhen Yuije Electronics Co. Ltd. China).…”

Section: Materials Characterizationmentioning

confidence: 99%

“…small polarons and oxygen vacancies [8], resulting mixed ionic electronic conductivity (MIEC) [5] [9]. Beside these properties, ceria exhibits non-classical giant electrostriction properties at room temperatures [10]- [12], both in thin films and bulk materials.…”

Section: Introductionmentioning

confidence: 99%

“…Under applied electric field, distorted CeCe-7OO-V O •• complexes conform to a more fluorite like structure, subsequently local atomic displacement produces giant electromechanical effect [16]. Despite intriguing, some questions about the role of oxygen vacancies and microstructure on electrostriction still remains unexplored [12]. Besides, Lubomirsky and coworkers suggested a power law dependence of I-V relationship in grain boundary blocking behavior based on space charge mechanisms [18] [19] and demonstrated that an increase of grain boundary resistance leads to a decrease in the portion of applied voltage drop in the bulk, decreasing electromechanical properties [20].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Effect of oxygen defects blocking barriers on gadolinium doped ceria (GDC) electro-chemo-mechanical properties

et al. 2019

Self Cite

View full text Add to dashboard Cite

Some oxygen defective metal oxides, such as cerium and bismuth oxides, have recently shown exceptional electrostrictive properties that are even superior to the best performing lead-based electrostrictors, e.g. lead-magnesium-niobates (PMN). Compared to piezoelectric ceramics, electromechanical mechanisms of such materials do not depend on crystalline symmetry, but on the concentration of oxygen vacancy (V O •• ) in the lattice. In this work, we investigate for the first time the role of oxygen defect configuration on the electro-chemomechanical properties. This is achieved by tuning the oxygen defects blocking barrier density in polycrystalline gadolinium doped ceria with known oxygen vacancy concentration, Ce0.9Gd0.1O2-δ, δ = 0.05. Nanometric starting powders of ca. 12 nm are sintered in different conditions, including field assisted spark plasma sintering (SPS), fast firing and conventional method at high temperatures. These approaches allow controlling grain size and Gd-dopant diffusion, i.e. via thermally driven solute drag mechanism. By correlating the electro-chemomechanical properties, we show that oxygen vacancy distribution in the materials play a key role in ceria electrostriction, overcoming the expected contributions from grain size and dopant concentration.

show abstract

Section: Introductionmentioning

confidence: 77%

Section: Materials Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of oxygen defects blocking barriers on gadolinium doped ceria (GDC) electro-chemo-mechanical properties

et al. 2019

Self Cite

View full text Add to dashboard Cite

show abstract

“…In this work, we demonstrate the role of oxygen vacancies on the electrical, mechanical and electromechanical properties of Gd-doped ceria, highlighting their concentration/configuration dependency on each effect. 3…”

Section: Introductionmentioning

confidence: 99%

The role of oxygen defects on the electro-chemo-mechanical properties of highly defective gadolinium doped ceria

2020

View full text Add to dashboard Cite

In light of the recent discovery of giant electrostriction in defective fluorites, here we investigate the interplay between mechanical, electrochemical and electromechanical properties of oxygen defective ceria compositions (Ce1−xGdxO2−δ) as the effect of Gd-doping (x = 0.05−0.3) at low temperatures. Highly dense polycrystalline ceramics are prepared as micron-size grains with a minimized grain boundary extent. Electrochemical ionic migration reveals that doping controls the configuration of oxygen vacancies in the samples. Unexpectedly, we observe that electromechanical activity is depends on oxygen vacancy configuration rather than on its nominal concentration. The primary creep at room temperature indicates a declining viscoelastic trend with increasing oxygen defects.

show abstract

Suitability of Raman Spectroscopy for Assessing Anisotropic Strain in Thin Films of Doped Ceria

Kraynis

Makagon

Mishuk

et al. 2019

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

A protocol for characterizing relaxation of anisotropic strain in thin films of 10 mol% Eu-or Sm-doped ceria is described. The method is based on comparison of Raman spectra and X-ray diffraction patterns from substratesupported films, displaying in-plane compressive strain (initial state), with analogous data from 2 mm diameter self-supported films (i.e., membranes), prepared by partial substrate removal (final state). These membranes are found to be relaxed, i.e., approximately unstrained, but with increased unit cell volume. The effective (i.e., 2-state) Grüneisen parameter of the F 2g Raman active mode for these films is calculated to be 0.4 ± 0.1, which is ≈30% of the literature value for the corresponding ceramics under isostatic pressure. On this basis, it is found that the observed red-shift of the F 2g mode frequency following isothermal strain relaxation of the doped ceria thin films cannot be determined solely by the increase in average unit cell volume. The study presented here may shed light on the suitability of Raman spectroscopy as a technique for characterizing strain in lanthanide-doped ceria thin films.

show abstract

Relaxation and saturation of electrostriction in 10 mol% Gd-doped ceria ceramics

Cited by 53 publications

References 25 publications

Effect of oxygen defects blocking barriers on gadolinium doped ceria (GDC) electro-chemo-mechanical properties

Effect of oxygen defects blocking barriers on gadolinium doped ceria (GDC) electro-chemo-mechanical properties

The role of oxygen defects on the electro-chemo-mechanical properties of highly defective gadolinium doped ceria

Suitability of Raman Spectroscopy for Assessing Anisotropic Strain in Thin Films of Doped Ceria

Contact Info

Product

Resources

About