Relaxation and recombination in InAs quantum dots

Dawson, P.; Göbel, E. O.; Pierz, K.; Rubel, Oleg; Baranovskiǐ, S. D.; Thomas, P.

doi:10.1002/pssb.200675602

Cited by 10 publications

(9 citation statements)

References 57 publications

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“…Thermal quenching then results from nonradiative recombination processes that occur in one or several of those higher-energy states. [4][5][6][7][8][9][10][11][12][13][14][15][16] Even though both measurements and theoretical modeling appear straightforward, there remains to this day significant differences and apparent contradictions in the interpretation of the results published by different groups over the last decade.…”

Section: Introductionmentioning

confidence: 99%

“…As temperature is increased, redistribution of the carrier population occurs toward the low-energy tail of the QD energy distribution. [4][5][6]9,11 When the full width at half maximum ͑FWHM͒ of the emission of the ensemble of QDs is much smaller than any expected activation energy, the QD energy distribution is often represented by a ␦ function. The solution of the thermal rate equations in steady state for the ensemble PL intensity I then gives…”

Section: Introductionmentioning

confidence: 99%

“…Their model, which assumed correlated pair escape, reproduced qualitatively the PL integrated intensity of the individual QD families as well as that of the WL. Dawson et al 9,11 included in their model independent distributions of electrons and holes but they only considered transitions from QDs to the GaAs matrix. They found that the PL integrated intensity, FWHM, and peak energy was best fitted by uncorrelated carrier escape.…”

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confidence: 99%

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Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Gélinas

Lanacer²,

Leonelli³

et al. 2010

Phys. Rev. B

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We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main escape mechanism of the carriers confined in the quantum dots is through thermal emission to the wetting layer. The activation energy for this process is found to be close to one-half the energy difference between that of a given family of quantum dots and that of the wetting layer as measured by photoluminescence excitation experiments. This indicates that electron and holes exit the InAs quantum dots as correlated pairs.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Carrier thermal escape in families of InAs/InP self-assembled quantum dots

Gélinas

Lanacer²,

Leonelli³

et al. 2010

Phys. Rev. B

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“…Warming the sample sufficiently causes a thermal redistribution of carriers from higher-energy (smaller) dots to lower-energy (bigger) dots via the wetting layer. This is manifested by the PL energy decreasing faster with increasing temperature than is expected from the change in the band gap [41][42][43]. Nuytten and co-workers studied the temperature dependence of the PL energy in magnetic field under such conditions [40], and concluded that for dots where such a redistribution of carriers occurs, in the presence of magnetic field, the contribution of the smaller dots (high-energy dots) to the PL energy becomes greater relative to the bigger dots (lowenergy dots) as the field increases.…”

Section: Bohr Radius Bubble Plotmentioning

confidence: 92%

Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots

et al. 2017

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We report a comprehensive study of exciton confinement in self-assembled InAs quantum dots (QDs) in strain-engineered metamorphic In x Ga 1-x As confining layers on GaAs using low-temperature magnetophotoluminescence. As the lattice mismatch (strain) between QDs and confining layers (CLs) increases from 4.8% to 5.7% the reduced mass of the exciton increases, but saturates at higher mismatches. At low QD-CL mismatch there is clear evidence of spillover of the exciton wave function due to small localization energies. This is suppressed as the In content x in the CLs decreases (mismatch and localization energy increasing). The combined effects of low effective mass and wave-function spillover at high x result in a diamagnetic shift coefficient that is an order of magnitude larger than for samples where In content in the barrier is low (mismatch is high and localization energy is large). Finally, an anomalously small measured Bohr radius in samples with the highest x is attributed to a combination of thermalization due to low localization energy, and its enhancement with magnetic field, a mechanism which results in small dots in the ensemble dominating the measured Bohr radius.

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“…quantum computing devices. The fabrication techniques of the SACQDs are not a simple formation mechanism but appears to be difficult and not easy to be controlled (Barabási & Stanley, 1995;Darula & Barabási, 1997;Daudin et al, 1997;Dawson et al, 2007;Eaglesham & Cerullo, 1990;Lee et al, 1998;Rastelli et al, 2005;Tersoff, 1995;Tu & Tersoff, 2007). The various parameters (e.g.…”

Section: Self-assembled Qdsmentioning

confidence: 99%