Relativistic versus Nonrelativistic Approaches to a Low Perveance High Quality Matched Beam for a High Efficiency Ka-Band Klystron

Behtouei, Mostafa; Spataro, B.; Faillace, L.; Carillo, Martina; Leggieri, Alberto; Palumbo, L.; Migliorati, M.

doi:10.3390/instruments5040033

Cited by 3 publications

(2 citation statements)

References 16 publications

(28 reference statements)

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“…To power such a device, a multi-MW RF source in Ka-band must be developed. In this context, an electron gun with a lower perveance to obtain a high-efficiency klystron for driving phase-space-linearizing devices was investigated [73].…”

Section: Very-high-frequency Rf Devices For Bunch Compressionmentioning

confidence: 99%

A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs

Rosenzweig,

Andonian,

Agustsson

et al. 2024

Instruments

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Recently, considerable work has been directed at the development of an ultracompact X-ray free-electron laser (UCXFEL) based on emerging techniques in high-field cryogenic acceleration, with attendant dramatic improvements in electron beam brightness and state-of-the-art concepts in beam dynamics, magnetic undulators, and X-ray optics. A full conceptual design of a 1 nm (1.24 keV) UCXFEL with a length and cost over an order of magnitude below current X-ray free-electron lasers (XFELs) has resulted from this effort. This instrument has been developed with an emphasis on permitting exploratory scientific research in a wide variety of fields in a university setting. Concurrently, compact FELs are being vigorously developed for use as instruments to enable next-generation chip manufacturing through use as a high-flux, few nm lithography source. This new role suggests consideration of XFELs to urgently address emerging demands in the semiconductor device sector, as identified by recent national need studies, for new radiation sources aimed at chip manufacturing. Indeed, it has been shown that one may use coherent X-rays to perform 10–20 nm class resolution surveys of macroscopic, cm scale structures such as chips, using ptychographic laminography techniques. As the XFEL is a very promising candidate for realizing such methods, we present here an analysis of the issues and likely solutions associated with extending the UCXFEL to harder X-rays (above 7 keV), much higher fluxes, and increased levels of coherence, as well as methods of applying such a source for ptychographic laminography to microelectronic device measurements. We discuss the development path to move the concept to rapid realization of a transformative XFEL-based application, outlining both FEL and metrology system challenges.

show abstract

Section: Very-high-frequency Rf Devices For Bunch Compressionmentioning

confidence: 99%

A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs

Rosenzweig,

Andonian,

Agustsson

et al. 2024

Instruments

Self Cite

View full text Add to dashboard Cite

show abstract

“…To power such a device, a multi-MW RF source in Ka-band must be developed. In this context, an electron gun with a lower perveance to obtain a high efficiency klystron for driving phase space-linearizing devices has been investigated [75].…”

Section: Very High Frequency Rf Devices For Bunch Compressionmentioning

confidence: 99%

A high-flux compact X-ray free-electron laser for next-generation chip metrology needs

Rosenzweig,

Andonian,

Agustsson

et al. 2023

Preprint

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Recently, considerable work has been directed at development of a ultra-compact X-ray free-electron laser based on emerging techniques in high field cryogenic acceleration, with attendant dramatic improvements in electron beam brightness, and state-of-the-art concepts in beam dynamics, magnetic undulators, and X-ray optics. A full conceptual design of a 1 nm XFEL with a length and cost over an order of magnitude below current XFELs has resulted from this effort. This instrument has been developed with an emphasis on permitting exploratory scientific research in a wide variety of fields in a university setting. Concurrently, compact FELs are being urgently developed for use as an instrument to enable next generation chip manufacturing through use as a high flux, few-nm lithography source. This new role suggests consideration of XFELs to addressed urgently emerging demands in this sector, as identified by recent national need studies, for new radiation sources aimed at chip manufacturing: a coherent hard X-ray source which enables frontier metrology methods. Indeed, it has been shown that one may use coherent X-rays to perform 10 nm-class resolution surveys of macroscopic, cm-scale structures such as chips, using ptychographic laminography. As the XFEL is a very promising candidate for realizing such methods, we present here an analysis of the issues and likely solutions associated with extending the UCXFEL to harder X-rays (above 7 keV), much higher fluxes and levels of coherence, and methods of applying such a source for ptychographic laminography to micro-electronic device measurements. We discuss the development path to move the concept to rapid realization of a transformative FEL-based application, outlining FEL and metrology system challenges.

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A low-perveance electron gun for a high-efficiency Ka-band klystron

Spataro

Behtouei²,

Paolo³

et al. 2022

Eur. Phys. J. Plus

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Relativistic versus Nonrelativistic Approaches to a Low Perveance High Quality Matched Beam for a High Efficiency Ka-Band Klystron

Cited by 3 publications

References 16 publications

A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs

A High-Flux Compact X-ray Free-Electron Laser for Next-Generation Chip Metrology Needs

A high-flux compact X-ray free-electron laser for next-generation chip metrology needs

A low-perveance electron gun for a high-efficiency Ka-band klystron

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