Relationships between EUV resist outgassing and contamination deposition at Selete

Oizumi, Hiroaki; Matsumaro, Kazuyuki; Nomura, Satoshi; Santillan, Julius Joseph; Itani, Toshiro; Watanabe, Takeo; Matsuda, Naohiro; Harada, Tetsuo; Kinoshita, Hiroo

doi:10.1117/12.878571

Cited by 2 publications

(9 citation statements)

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“…In resist outgassing quantification, the pressure rise and gas chromatography mass spectrometry (GC-MS) measurement methods are typically utilized. The GC-MS method has also been reported to provide comparatively accurate results in the identification of resist outgassing components [18] . In 2006, Selete initiated resist outgassing studies to establish a system of screening EUV resists prior to exposure evaluations at the exposure tool [21] .…”

Section: Euv Resist Outgassingmentioning

confidence: 99%

“…Resist outgassing is considered an EUVL-specific issue [18] . Resist outgassing also exists in other lithographic technologies but needs special consideration in EUVL where exposure tool systems are kept in significantly clean ultra-high vacuum conditions to maintain a high EUV light intensity at wafer surface.…”

Section: Euv Resist Outgassingmentioning

confidence: 99%

“…Thus, intensity loss due to mirror contamination from resist outgassing needs to be minimized or eliminated. To gain a deeper understanding of EUV resist outgassing and develop outgassing control techniques, various research groups [18][19][20] have taken steps in its analysis and quantification. In resist outgassing quantification, the pressure rise and gas chromatography mass spectrometry (GC-MS) measurement methods are typically utilized.…”

Section: Euv Resist Outgassingmentioning

confidence: 99%

“…The main goal was to understand resist outgassing mechanisms for the development of low-outgassing high performance EUV resists. More than 400 resists have been analyzed (using the pressure rise method) [18] . The results of which, have been beneficial in maintaining an effective and clean EUV exposure tool.…”

Section: Euv Resist Outgassingmentioning

confidence: 99%

“…On resist outgassing component analysis and characterization using the GC-MS a total of more than 40 resists (including the SSRs mentioned in the previous chapter) were investigated [18] [ Fig. 6].…”

Section: Euv Resist Outgassingmentioning

confidence: 99%

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A Comprehensive Review of EUV Resist Materials and Processing at Selete

Itani

2011

J. Photopol. Sci. Technol.

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The Selete research and development program was started to prepare extreme ultraviolet (EUV) lithography for the manufacturing of semiconductor devices. In the past five years, Selete has evaluated more than 1000 EUV resists from resist suppliers using the small field exposure tool (SFET) which is linked in-line to a coater / developer track system under chemically controlled environments. From the results obtained, the lithographic performance of various Selete standard resists (SSRs) and optimization of related processes has been reported. Based on these, advancement in resist materials was observed to be of steady progress in terms of resolution limit, sensitivity and line width roughness (LWR). LWR reduction and pattern collapse prevention were also achieved through the application of various alternative processes. One such alternative process is the application of the aqueous solution of tetrabutylammonium hydroxide (TBAH) instead of the conventional tetramethylammonium hydroxide developer. TBAH was found to be most effective in the suppression of resist film swelling which causes pattern collapse. Alternative rinse solutions evaluated and utilized have also allowed improvements in LWR reduction and pattern collapse. Meanwhile, EUV resist outgassing, which is also a concern for the effective application of EUV lithography, was quantified and analyzed. Analysis results have shown that protecting group and photo-acid generator components of EUV resists are the main source of such outgassing during exposure. Moreover, for fundamental research, a new approach using high speed atomic force microscopy in the in situ analysis of resists during the dissolution and rinse processes is presented. The results obtained with this method supported a number of previous assumptions about resist dissolution and rinse mechanisms which presented potential pointers for use in next-generation lithographic applications.

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Section: Euv Resist Outgassingmentioning

confidence: 99%

Section: Euv Resist Outgassingmentioning

confidence: 99%

Section: Euv Resist Outgassingmentioning

confidence: 99%

Section: Euv Resist Outgassingmentioning

confidence: 99%

Section: Euv Resist Outgassingmentioning

confidence: 99%

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A Comprehensive Review of EUV Resist Materials and Processing at Selete

Itani

2011

J. Photopol. Sci. Technol.

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Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm

Shao

Sung

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Neutral outgassed species from polymethylmethacrylate (PMMA), a model resist (denoted RRR), and three underlayer thin films have been characterized and their absolute outgassing rates determined using a quadrupole mass spectrometer following irradiation at 13.5 nm. The radiation, which was in the extreme ultraviolet (EUV) energy range at 13.5 nm, was delivered from the 08A1-beamline at the National Synchrotron Radiation Research Center in Taiwan. The side chains of acryl-type polymers that are vulnerable to fragmentation and outgassing upon EUV irradiation were characterized and the important outgassed species (H 2 O and H 3 O þ ) were identified from the Si-containing photosensitive materials. The authors propose that the Si-OH formed on the Si-containing surfaces upon EUV irradiation likely undergoes subsequent incremental H 2 O and H 3 O þ outgassing upon cumulative EUV irradiation. A benchmark comparison revealed that the absolute outgassing rates of PMMA, RRR, and a Si-containing underlayer sample determined in this work were consistent with values previously reported in the literature. Thus, we have effectively demonstrated that the Taiwanese facility is capable of evaluating absolute resist outgassing rates, making it one of a limited number of EUV resist evaluation sites worldwide. The authors have provided direct evidence that the extent of ionic and neutral outgassing from 80, 100, and 125 nm PMMA and RRR films is not thickness-dependent. The authors have further demonstrated that the absolute outgassing rates of PMMA and RRR films of various thickness and two oxy-hydrocarbon underlayer samples correlated strongly with the 13.5 nm photoabsorption (r abs ) and the structural toughness [double-bond-equivalence-per-backbone (DBEPB)] of the polymers. The authors revealed that the formula r abs /DBEPB could be used as a generic metric to predict the resistance of photosensitive films to EUV irradiation for the oxy-hydrocarbons in this work and four previously studied photoresists.

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Relationships between EUV resist outgassing and contamination deposition at Selete

Cited by 2 publications

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A Comprehensive Review of EUV Resist Materials and Processing at Selete

A Comprehensive Review of EUV Resist Materials and Processing at Selete

Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm

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