Abstract:To establish a methode for predicting the integral sensitivity of transmission-mode GaAs photocathodes, the relationship between X-ray relative diffraction intensity and integral sensitivity of GaAlAs/GaAs photocathode material is researched. After thermocompression bonding Si3N4/GaAlAs/GaAs/GaAlAs/GaAs epitaxial material to glass window in the vacuum condition, and chemically etching the GaAlAs buffer-layer and GaAs substrate, the glass/Si3N4/GaAlAs/GaAs photocathode module is formed. The X-ray relative diffr… Show more
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