Relationship between persistent phosphorescence and electric conductivity in transparent conductive oxide β- Ga_2O_3

In Situ Characterization and Modification of β‐Ga2O3 Flakes Using an Ion Micro‐Probe

“…A recent work on photodetectors based on Ga 2 O 3 suggested that the fast component with a decay time of 1.2 s is probably associated to band-band transitions. [32] However, Yamaga et al [36] based on luminescence decay measurements suggest much faster decay times for the self-trapped exciton (in the microsecond range) and the authors attribute lifetimes longer than 1 s to distant electronhole pairs with deep electron-trapped centers. Therefore, the slow components, in particular those with time constants of 46.9 and 469.5 s, may be associated with processes involving deep levels.…”

Investigation of Thermal Properties of β-Ga2O3 Nanomembranes on Diamond Heterostructure Using Raman Thermometry

“…Given bandgap (4.9 eV) of β-Ga 2 O 3 NM, a 5% of actual light absorption in β-Ga 2 O 3 NM at 532 nm was considered in this calculation from the known absorption coefficient of β-Ga 2 O 3 . 36 We also assume that the heat flux is distributed in a Gaussian profile. 35,37 Thus, the local temperature distribution was calculated from the Gaussian heat distribution using the measured laser spot diameter and Eq.…”