Relation of neutron to ion damage annealing in Si and Ge

Vook, F. L.; Stein, H. J.

doi:10.1080/00337576908235576

Cited by 155 publications

(23 citation statements)

References 30 publications

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“…a high energy state) and the lattice collapses to a more stable (i.e. a lower energy state) amorphous phase [4][5][6]. Conversely, heterogeneous nucleation -first proposed by Morehead and Crowder [7] -assumes that small pockets of amorphous material are formed by the incoming ions and that the overlapping of these damage zones lead to the formation of an amorphous layer as described by Equation 1:…”

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confidence: 99%

An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

et al. 2016

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Transmission electron microscopy with in situ ion irradiation has been used to examine the ionbeam-induced amorphisation of crystalline silicon under irradiation with light (He) and heavy (Xe) ions at room temperature. Analysis of the electron diffraction data reveal the heterogeneous amorphisation mechanism to be dominant in both cases. The differences in the amorphisation curves are discussed in terms of intra-cascade dynamic recovery, and the role of electronic and nuclear loss mechanisms.

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confidence: 99%

An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

et al. 2016

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“…Figures 1 (a),1 (b) and1 (c) were irradiated to fluences of 0,02, 0.11 and ().37 dpa, respectively. The e' flux was 2.64x10~°* dpa s' 1 . The SADPs (right hand side) were taken with an aperture whose diameter was <1.92 ^m.…”

Section: Kr + Ion Irradiations and The Dual Irradiationsmentioning

confidence: 99%

“…The amorphization of silicon (Si) as a result of irradiation by energetic particles has been studied for over two decades, but the exact mecnanism(s) by which the transition from the crystalline(c)-to-amorphous(a) phase takes place has remained unresolved [1][2][3][4][5][6][7][8][9][10][11][12]. in this paper we present new experimental results on the c-to-a pnase transition for electron (1-MeV e') and/or ion-irradiated Si (1.0 or 1.5-MeV Kr + ions).…”

Section: Inttroductionmentioning

confidence: 99%

The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon

Seidman

Averback²,

Okamoto³

et al. 1985

MRS Proc.

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The amorphous(a)-to-crystalline (c) phase transition has been studied in electron(e-) and/or ion irradiated silicon (Si). The irradiations were performed in i n the Argonne High Voltage Microscope-Tandem Facility The irradia ion of Si, at <10 K, with 1-MeV e- to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at <10 K, with 1.0 or 1.5-MeV Kr+ ions induced the c-to-a transition by a fluence of ≈0.37 dpa. Alternatively a dual irradiation, at 10 K, with 1.0-MeV e and 1.0 or 1.5-MeV Kr+ to a Kr+ fluence of 1.5 dpa -- where the ratio of the displacement rates for e- to ions was ≈0.5--resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of radiation damage and the mobilities of point defects.

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confidence: 99%

“…The mechanisms responsible for the formation of a continuous amorphous phase have been investigated in considerable detail at medium and high bombardment energies [4][5][6][7] and two main types of models based on either homogeneous or heterogeneous nucleation of the amorphous phase have been proposed for different implant conditions. Under light ion bombardment its growth is generally well explained in terms of homogeneous nucleation of the amorphous phase, once a critical defect density is exceeded [4,7]. On the other hand, for heavy ion bombardment in which the energy deposition rates are much higher, heterogeneous nucleation of the amorphous phase occurs either through disorder accumulation of overlapping collision cascades or within a single collision cascade [5,6,8].…”

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Determination of ion track and shapes with damage simulations on the base of ellipsometric and backscattering spectrometric measurements

Polgár

Fried

Khanh

et al. 2008

Phys. Status Solidi (c)

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On the base of geometrical and statistical considerations a damage simulator was created in order to determine the ion track‐radius and ‐shape of ion‐implantation caused damage in single‐crystalline Si. Damage vs. dose curves calculated by spectroscopic ellipsometry (SE) and Rutherford backscattering/channeling spectrometry (RBS/C) measurements, using different doses of 100 keV Xe implantation, gave information about the damage profile in depth. Both methods are required, because of dose‐dependent discrepancies of SE compared with RBS/C [Fried et al., Thin Solid Films 455/456, 404 (2004)]. Different kinds of damage models were investigated to calculate the ion track‐radius and to describe the damages in depth and the shape of ion track. Comparing directly the simulated and the measured damage vs. dose curves, the damage function and the other simulation parameters were optimized and hence the ion track size and even the shape can be determined. The dose dependent mean size of the unchanged crystalline regions, obtained from the simulation was correlated with the complex dielectric functions, obtained from the SE analysis. The results clearly show the effect of decreasing size of the unchanged crystalline regions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Relation of neutron to ion damage annealing in Si and Ge

Cited by 155 publications

References 30 publications

An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

An in situ transmission electron microscopy study of the ion irradiation induced amorphisation of silicon by He and Xe

The Crystalline-To-Amorphous Phase Transition In Irradiated Silicon

Determination of ion track and shapes with damage simulations on the base of ellipsometric and backscattering spectrometric measurements

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