2017
DOI: 10.1016/j.apsusc.2016.05.076
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Relation between secondary doping and phase separation in PEDOT:PSS films

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Cited by 39 publications
(31 citation statements)
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“…AFM images of random spots along individual channels in a typical device are shown in Figure S2b, Supporting Information. The images are readily interpretable as presence of a number of crystalline domains with different orientations (along the source electrode to drain) and well‐defined boundaries that extend up to tens of microns which is largely in agreement with the literature . Importance of good connectivity between domains and well‐aligned crystallography across transistor channels has been previously highlighted as these features have been shown to greatly influence charge mobility and performance as well as device‐to‐device variability due to presence of deep charge traps in the boundaries .…”
Section: Resultssupporting
confidence: 82%
See 1 more Smart Citation
“…AFM images of random spots along individual channels in a typical device are shown in Figure S2b, Supporting Information. The images are readily interpretable as presence of a number of crystalline domains with different orientations (along the source electrode to drain) and well‐defined boundaries that extend up to tens of microns which is largely in agreement with the literature . Importance of good connectivity between domains and well‐aligned crystallography across transistor channels has been previously highlighted as these features have been shown to greatly influence charge mobility and performance as well as device‐to‐device variability due to presence of deep charge traps in the boundaries .…”
Section: Resultssupporting
confidence: 82%
“…Electron. [35][36][37] Importance of good connectivity between domains and wellaligned crystallography across transistor channels has been previously highlighted as these features have been shown to greatly influence charge mobility and performance as well as device-to-device variability due to presence of deep charge traps in the boundaries. 2020, 6, 1901207 The electrical characteristics of individual device channels are demonstrated in Figure S2a, Supporting Information, showing variations in V th , µ, and SS for adjacent channels in a single device.…”
Section: Wwwadvelectronicmatdementioning
confidence: 99%
“…Most pronounced is the lamellar stacking direction, referenced as the (h00) plane. Depending on degree of long range order derived from processing approaches or the inclusion of poly-ionic dopants, [88][89][90][91][92][93][94] PEDOT films can exhibit between one and four lamellar scattering peaks along the (h00) plane. 88 The critical direction for electrical conductivity is the π-π stacking direction oriented perpendicular to the lamellar stacking direction.…”
Section: Microstructure Control and Characterizationmentioning
confidence: 99%
“…Beyond the peculiarity associated to the deposition techniques, auxiliary components are added to impart specific features to the resulting CPC film. For example, secondary dopants enhance the conductivity by acting on the microstructure of the polymer [ 54 ], while plasticizers [ 55 ] increase the flexibility of the film and improve the resiliency of electrical features after deformation. In the coating/dyeing, the textile is immersed/dipped in the CP suspension/solution; consequently, the conductive film is deposited all over the surface.…”
Section: Fabrication Of Conductive Textile Based On Conductive Polmentioning
confidence: 99%