Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga₂O₃/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector

Abstract

Novel p-i-n self-powered solar-blind UV photodetector based on p-type spiro-MeOTAD (spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the surface of Ga2O3 film deposited...

A Spiro-MeOTAD/Ga2O3/Si p-i-n Junction Featuring Enhanced Self-Powered Solar-Blind Sensing via Balancing Absorption of Photons and Separation of Photogenerated Carriers

“…Simultaneously, these photogenerated carriers are immediately separated by two built-in electric potentials: the holes and electrons drift into the spiro and Si, respectively. Finally, carriers flow into the external circuit, resulting in a high photocurrent. , …”

“…Finally, carriers flow into the external circuit, resulting in a high photocurrent. 29,30 To analyze the influence of spiro thickness on the photoelectric response performance, Figure 3b depicts the I− V curves of D1−D5 in linear coordinate under SBUV illumination with an intensity of 1 mW/cm 2 . Meanwhile, the key parameters such as thickness and transmittance of spiro layers, V oc , and I sc data of devices are compared and summarized in Table S1.…”

Graphene/Si Heterostructure with an Organic Interfacial Layer for a Self-Powered Photodetector with a High ON/OFF Ratio

“…Here, we propose a substitution method by using spiro-OMeTAD as an organic p-type hole transporting layer (HTL) to fabricate graphene/spiro-OMeTAD/Si heterostructure-based PDs because of its various advantages as mentioned below. Benefiting from its high solubility and amorphous nature, − the spiro-OMeTAD HTL can be prepared by simple spin coating. Also, due to its large band gap (∼2.9 eV), the spiro-OMeTAD is an ideal transparent material for graphene–Si PDs .…”

Ga2O3-Based Solar-Blind Position-Sensitive Detector for Noncontact Measurement and Optoelectronic Demodulation

“…Because of the advantages of high sensitivity, low background noise, and low false alarm rate, solar-blind ultraviolet photodetectors have significant applications in civil, industrial, and military fields. − Ultrawide-bandgap semiconductors, such as diamond, Al x Ga 1– x N, Mg x Zn 1– x O, and Ga 2 O 3 , have been utilized to develop such photodetectors because of their strong absorption in the solar-blind region. − Among the above materials, Ga 2 O 3 with an intrinsic bandgap of 4.2–5.3 eV has absorption cutoff wavelengths in the solar-blind region without the need of bandgap tuning through alloying or doping, making it an ideal candidate for solar-blind detection. − Recently, with the rapid development of optical measurement techniques, there is an increasing demand for solar-blind precision measurement, which has been demonstrated using photodetector arrays. − However, the measurement accuracy of these photodetector arrays was limited by the spacing and size of the photodetector pixels.…”

“…Figure h briefly illustrates the zero-bias performance parameters of state-of-the-art UV photodetectors developed from various wide-bandgap semiconductors. It is obvious that the responsivity as well as the response time of the PSD are superior to most UV photodetectors. − ,,,,,,,− ,− The excellent performances of the device benefit from the enhanced absorption efficiency and shortened transport path in the nanometer-thick Ga 2 O 3 .…”